Process steps for high quality si-based epitaxial growth at low temperature via rpcvd

Jongwan Jung, Baegmo Son, Byungmin Kam, Yong Sang Joh, Woonyoung Jeong, Seongjae Cho, Won Jun Lee, Sangjoon Park

Research output: Contribution to journalArticlepeer-review

2 Scopus citations


The key process steps for growing high-quality Si-based epitaxial films via reduced pressure chemical vapor deposition (RPCVD) are investigated herein. The quality of the epitaxial films is largely affected by the following steps in the epitaxy process: ex-situ cleaning, in-situ bake, and loading conditions such as the temperature and gaseous environment. With respect to ex-situ cleaning, dry cleaning is found to be more effective than wet cleaning in 1:200 dilute hydrofluoric acid (DHF), while wet cleaning in 1:30 DHF is the least effective. However, the best results of all are obtained via a combination of wet and dry cleaning. With respect to in-situ hydrogen bake in the presence of H2 gas, the level of impurities is gradually decreased as the temperature increases from 700C to a maximum of 850C, at which no peaks of O and F are observed. Further, the addition of a hydrogen chloride (HCl) bake step after the H2 bake results in effective in-situ bake even at temperatures as low as 700C. In addition, the effects of temperature and environment (vacuum or gas) at the time of loading the wafers into the process chamber are compared. Better quality epitaxial films are obtained when the samples are loaded into the process chamber at low temperature in a gaseous environment. These results indicate that the epitaxial conditions must be carefully tuned and controlled in order to achieve high-quality epitaxial growth.

Original languageEnglish
Article number3733
Issue number13
StatePublished - 1 Jul 2021

Bibliographical note

Funding Information:
Funding: This work was supported by the Ministry of Trade, Industry and Energy with the Korea Semiconductor Research Consortium Support Program for the development of the future semiconductor devices (10052928) and by National Research Foundation of Korea (NRF) funded by the Ministry of science, ICT and Future Planning (2020R1A6A1A03043435).

Publisher Copyright:
© 2021 by the authors. Licensee MDPI, Basel, Switzerland.


  • Epitaxy
  • Impurity
  • In-situ cleaning
  • Low temperature
  • Pre-cleaning
  • Si
  • SiGe
  • Surface treatment


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