Process Issues and Components for HTS Digital Integrated Circuit Fabrication

Amit P. Marathe; Frank Ludwig; T. Van Duzer; Luke Lee

doi:10.1109/77.403256

Process Issues and Components for HTS Digital Integrated Circuit Fabrication

Amit P. Marathe, Frank Ludwig, T. Van Duzer, Luke Lee

Department of Chemistry & Nanoscience

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

An etch-back planarization technique has been developed to planarize SrTiO3 insulating layers, which may be used in a YBCO IC process. Films of YBCO have been deposited on the planarized SrTiO3 surface. Structural and electrical characterization of these films suggests that the planarized surface can support the growth of epitaxial, c-axis oriented YBCO films. Experiments to evaluate and compare coupling efficiency in YBCO and Nb thin film Transformers are also described. Easy flux penetration in YBCO films may reduce the efficiency of transformer coupling below that found for Nb Transformers. The current coupling for Nb Transformers, as extracted from the SQUID threshold curves, was found to be high (M/L ∼ 0.93). The coupling in YBCO Transformers, as measured from the voltage modulation of bicrystal grain boundary junction SQUIDs, was found to be much lower (MIL ~ 0.75).

Original language	English
Pages (from-to)	3135-3138
Number of pages	4
Journal	IEEE Transactions on Applied Superconductivity
Volume	5
Issue number	2
DOIs	https://doi.org/10.1109/77.403256
State	Published - Jun 1995

Bibliographical note

Funding Information:
apartment of Physics Manuscript received October 17,1995. This work was supported in part by the Naval Research Laboratory under C~ntran(N RL) N00014-93-K-U)02.

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@article{11eda18010c249f2874a4c6a58d37416,

title = "Process Issues and Components for HTS Digital Integrated Circuit Fabrication",

abstract = "An etch-back planarization technique has been developed to planarize SrTiO3 insulating layers, which may be used in a YBCO IC process. Films of YBCO have been deposited on the planarized SrTiO3 surface. Structural and electrical characterization of these films suggests that the planarized surface can support the growth of epitaxial, c-axis oriented YBCO films. Experiments to evaluate and compare coupling efficiency in YBCO and Nb thin film Transformers are also described. Easy flux penetration in YBCO films may reduce the efficiency of transformer coupling below that found for Nb Transformers. The current coupling for Nb Transformers, as extracted from the SQUID threshold curves, was found to be high (M/L ∼ 0.93). The coupling in YBCO Transformers, as measured from the voltage modulation of bicrystal grain boundary junction SQUIDs, was found to be much lower (MIL ~ 0.75).",

author = "Marathe, {Amit P.} and Frank Ludwig and {Van Duzer}, T. and Luke Lee",

note = "Funding Information: apartment of Physics Manuscript received October 17,1995. This work was supported in part by the Naval Research Laboratory under C~ntran(N RL) N00014-93-K-U)02.",

year = "1995",

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doi = "10.1109/77.403256",

language = "English",

volume = "5",

pages = "3135--3138",

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publisher = "Institute of Electrical and Electronics Engineers Inc.",

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AU - Marathe, Amit P.

AU - Ludwig, Frank

AU - Van Duzer, T.

AU - Lee, Luke

N1 - Funding Information: apartment of Physics Manuscript received October 17,1995. This work was supported in part by the Naval Research Laboratory under C~ntran(N RL) N00014-93-K-U)02.

PY - 1995/6

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N2 - An etch-back planarization technique has been developed to planarize SrTiO3 insulating layers, which may be used in a YBCO IC process. Films of YBCO have been deposited on the planarized SrTiO3 surface. Structural and electrical characterization of these films suggests that the planarized surface can support the growth of epitaxial, c-axis oriented YBCO films. Experiments to evaluate and compare coupling efficiency in YBCO and Nb thin film Transformers are also described. Easy flux penetration in YBCO films may reduce the efficiency of transformer coupling below that found for Nb Transformers. The current coupling for Nb Transformers, as extracted from the SQUID threshold curves, was found to be high (M/L ∼ 0.93). The coupling in YBCO Transformers, as measured from the voltage modulation of bicrystal grain boundary junction SQUIDs, was found to be much lower (MIL ~ 0.75).

AB - An etch-back planarization technique has been developed to planarize SrTiO3 insulating layers, which may be used in a YBCO IC process. Films of YBCO have been deposited on the planarized SrTiO3 surface. Structural and electrical characterization of these films suggests that the planarized surface can support the growth of epitaxial, c-axis oriented YBCO films. Experiments to evaluate and compare coupling efficiency in YBCO and Nb thin film Transformers are also described. Easy flux penetration in YBCO films may reduce the efficiency of transformer coupling below that found for Nb Transformers. The current coupling for Nb Transformers, as extracted from the SQUID threshold curves, was found to be high (M/L ∼ 0.93). The coupling in YBCO Transformers, as measured from the voltage modulation of bicrystal grain boundary junction SQUIDs, was found to be much lower (MIL ~ 0.75).

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JO - IEEE Transactions on Applied Superconductivity

JF - IEEE Transactions on Applied Superconductivity

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ER -

Process Issues and Components for HTS Digital Integrated Circuit Fabrication

Abstract

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