Abstract
The effect of hole-polaron charging at a hole-injection/hole-transport interface within a functioning organic diode was investigated by single molecule spectroscopy and associated modeling. Efficient quenching of both singlet and triplet excitons by hole polarons is observed at high forward bias due to a buildup of interfacial polaron density. Additionally, for some diodes, an unexpected quenching process was observed at reverse bias, which is ascribed to hole charging of the interface due to the leakage current.
Original language | English |
---|---|
Article number | 051906 |
Journal | Applied Physics Letters |
Volume | 87 |
Issue number | 5 |
DOIs | |
State | Published - 2005 |
Bibliographical note
Funding Information:This work was supported by the National Science Foundation, Welch Foundation, and Keck Foundation.