Pressure-induced metal–insulator transitions in chalcogenide NiS2-xSex

Tayyaba Hussain, Myeong jun Oh, Muhammad Nauman, Younjung Jo, Garam Han, Changyoung Kim, Woun Kang

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

We report the temperature-dependent resistivity ρ(T) of chalcogenide NiS2-xSex (x = 0.1) using hydrostatic pressure as a control parameter in the temperature range of 4–300 K. The insulating behavior of ρ(T) survives at low temperatures in the pressure regime below 7.5 kbar, whereas a clear insulator-to-metallic transition is observed above 7.5 kbar. Two types of magnetic transitions, from the paramagnetic (PM) to the antiferromagnetic (AFM) state and from the AFM state to the weak ferromagnetic (WF) state, were evaluated and confirmed by magnetization measurement. According to the temperature–pressure phase diagram, the WF phase survives up to 7.5 kbar, and the transition temperature of the WF transition decreases as the pressure increases, whereas the metal–insulator transition temperature increases up to 9.4 kbar. We analyzed the metallic behavior and proposed Fermi-liquid behavior of NiS1.9Se0.1.

Original languageEnglish
Pages (from-to)235-238
Number of pages4
JournalPhysica B: Condensed Matter
Volume536
DOIs
StatePublished - 1 May 2018

Bibliographical note

Publisher Copyright:
© 2017 Elsevier B.V.

Keywords

  • Magnetic measurements
  • Magnetic phase transition
  • Metal–insulator transition (MIT)
  • NiSSe
  • Non-Fermi-liquid behavior
  • ρ(T) measurements

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