Presence of gapped silicene-derived band in the prototypical (3 × 3) silicene phase on silver (111) surfaces

J. Avila, P. De Padova, S. Cho, I. Colambo, S. Lorcy, C. Quaresima, P. Vogt, A. Resta, G. Le Lay, M. C. Asensio

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Abstract

By mapping the low-energy electronic dynamics using angle resolved photoemission spectroscopy (ARPES), we have shed light on essential electronic characteristics of the (3 × 3) silicene phase on Ag(111) surfaces. In particular, our results show a silicene-derived band with a clear gap and linear energy-momentum dispersion near the Fermi level at the Γ symmetry point of the (3 × 3) phase at several distinctive Brillouin zones. Moreover, we have confirmed that the large buckling of ∼0.7 of this silicene structure induces the opening of a gap close to the Fermi level higher than at least 0.3 eV, in agreement with recent reported photoemission results. The two-dimensional character of the charge carriers has also been revealed by the photon energy invariance of the gapped silicene band, suggesting a limited silicene-silver hybridization, in disagreement with recent density-functional theory (DFT) predictions.

Original languageEnglish
Article number262001
JournalJournal of Physics Condensed Matter
Volume25
Issue number26
DOIs
StatePublished - 3 Jul 2013

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