Abstract
The design and synthesis of new solution processable semiconducting π-extended porphyrin derivatives H2TPEP and ZnTPEP were introduced and their use in the fabrication of high-performing thin film and single-crystal OFET devices were described. Due to strong π-π interactions, new porphyrin derivatives showed high crystallinity in film state and displayed excellent electrical characteristics with high carrier mobilities of 0.15 cm2/Vs for ZnTPEP and 0.029 cm2/Vs for H2TPEP together with high on/off current ratios of >105 and >104, respectively. When the devices were fabricated with their single crystals, ZnTPEP displayed excellent characteristic with a high mobility of 0.2 cm2/Vs and H2TPEP showed 0.3 cm2/Vs with high on/off current ratios of >104 and >105, respectively. Remarkably, although Zn(II)-porphyrin based single-crystal device usually shows much higher mobility than the device made of free-based porphyrin single-crystal, the mobility of H2TPEP single-crystal device was significantly higher than that of the ZnTPEP one, because of effective crystalline packing with short layer distances found in the single-crystal prepared from H2TPEP.
Original language | English |
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Pages (from-to) | 20-24 |
Number of pages | 5 |
Journal | Synthetic Metals |
Volume | 220 |
DOIs | |
State | Published - 1 Oct 2016 |
Bibliographical note
Funding Information:The authors acknowledge the financial supports from the National Research Foundation of Korea ( NRF-2013R1A1A2007429 , NRF-20110020033 , NRF-2015R1C1A2A01053025 ) and the Key Research Institute Program ( NRF-20100020209 ).
Publisher Copyright:
© 2016 Elsevier B.V. All rights reserved.
Keywords
- Field-effect transistor
- Porphyrin
- Semiconductor
- Thin film
- π-π interaction