Abstract
Charging and topography evolution simulations during plasma etching of dense line-and-space patterns reveal that multiple-feature effects influence critically the etch profile characteristics of the various lines. By including neighboring lines, the simulation predicts a peculiar notching behavior, where the extent of notching varies with the location of the line. Feature-scale modeling can no longer be focused on individual features alone; "adjacency" effects are crucial for understanding and predicting the outcome of etching experiments at reduced device dimensions.
| Original language | English |
|---|---|
| Pages (from-to) | 2377-2379 |
| Number of pages | 3 |
| Journal | Applied Physics Letters |
| Volume | 70 |
| Issue number | 18 |
| DOIs | |
| State | Published - 5 May 1997 |