Abstract
In this paper, the correlation between the measured TLP results and HBM-ESD results was quantitatively revealed by using a proposed TLP-ESD comparison lookup diagram. By comparing the characteristics of the GaAs-based device with those of the Si-based device, the differences based on the electro-thermal characteristics of the substrate were quantitatively compared and analyzed in terms of ESD layout area, physical failure, and TCAD simulation.
| Original language | English |
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| Title of host publication | 7th IEEE Electron Devices Technology and Manufacturing Conference |
| Subtitle of host publication | Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023 |
| Publisher | Institute of Electrical and Electronics Engineers Inc. |
| ISBN (Electronic) | 9798350332520 |
| DOIs | |
| State | Published - 2023 |
| Event | 7th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2023 - Seoul, Korea, Republic of Duration: 7 Mar 2023 → 10 Mar 2023 |
Publication series
| Name | 7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023 |
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Conference
| Conference | 7th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2023 |
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| Country/Territory | Korea, Republic of |
| City | Seoul |
| Period | 7/03/23 → 10/03/23 |
Bibliographical note
Publisher Copyright:© 2023 IEEE.
Keywords
- HBM ESD
- Lookup diagram
- TCAD
- TLP