@inproceedings{f947f15f972e48548de8d41e94ee5c56,
title = "Predictable ESD Criteria with Proposed Comparison Diagram between TLP and HBM ESD for Various Device Technologies and Different Substrates",
abstract = "In this paper, the correlation between the measured TLP results and HBM-ESD results was quantitatively revealed by using a proposed TLP-ESD comparison lookup diagram. By comparing the characteristics of the GaAs-based device with those of the Si-based device, the differences based on the electro-thermal characteristics of the substrate were quantitatively compared and analyzed in terms of ESD layout area, physical failure, and TCAD simulation.",
keywords = "HBM ESD, Lookup diagram, TCAD, TLP",
author = "Hyeokjae Lee and Kim, {Dong Sung} and Noh, {Jae Young} and Youngboo Kim and Jisun Park and Hyungsoon Shin",
note = "Funding Information: This research was supported by next generation intelligence semiconductor foundation (Project Number: 20010288). Authors also would like to thank General Analysis (GA) business unit of QRT Inc. for their help at physical analysis of device. Publisher Copyright: {\textcopyright} 2023 IEEE.; 7th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2023 ; Conference date: 07-03-2023 Through 10-03-2023",
year = "2023",
doi = "10.1109/EDTM55494.2023.10102935",
language = "English",
series = "7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "7th IEEE Electron Devices Technology and Manufacturing Conference",
}