Predictable ESD Criteria with Proposed Comparison Diagram between TLP and HBM ESD for Various Device Technologies and Different Substrates

Hyeokjae Lee; Dong Sung Kim; Jae Young Noh; Youngboo Kim; Jisun Park; Hyungsoon Shin

doi:10.1109/EDTM55494.2023.10102935

Predictable ESD Criteria with Proposed Comparison Diagram between TLP and HBM ESD for Various Device Technologies and Different Substrates

Hyeokjae Lee, Dong Sung Kim, Jae Young Noh, Youngboo Kim, Jisun Park, Hyungsoon Shin

Electronic and Electrical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

In this paper, the correlation between the measured TLP results and HBM-ESD results was quantitatively revealed by using a proposed TLP-ESD comparison lookup diagram. By comparing the characteristics of the GaAs-based device with those of the Si-based device, the differences based on the electro-thermal characteristics of the substrate were quantitatively compared and analyzed in terms of ESD layout area, physical failure, and TCAD simulation.

Original language	English
Title of host publication	7th IEEE Electron Devices Technology and Manufacturing Conference
Subtitle of host publication	Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9798350332520
DOIs	https://doi.org/10.1109/EDTM55494.2023.10102935
State	Published - 2023
Event	7th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2023 - Seoul, Korea, Republic of Duration: 7 Mar 2023 → 10 Mar 2023

Publication series

Name	7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023

Conference

Conference	7th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2023
Country/Territory	Korea, Republic of
City	Seoul
Period	7/03/23 → 10/03/23

Bibliographical note

Publisher Copyright:
© 2023 IEEE.

Keywords

HBM ESD
Lookup diagram
TCAD
TLP

Access to Document

10.1109/EDTM55494.2023.10102935

Cite this

Lee, H., Kim, D. S., Noh, J. Y., Kim, Y., Park, J., & Shin, H. (2023). Predictable ESD Criteria with Proposed Comparison Diagram between TLP and HBM ESD for Various Device Technologies and Different Substrates. In 7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023 (7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EDTM55494.2023.10102935

Lee, Hyeokjae ; Kim, Dong Sung ; Noh, Jae Young et al. / Predictable ESD Criteria with Proposed Comparison Diagram between TLP and HBM ESD for Various Device Technologies and Different Substrates. 7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023. Institute of Electrical and Electronics Engineers Inc., 2023. (7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023).

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abstract = "In this paper, the correlation between the measured TLP results and HBM-ESD results was quantitatively revealed by using a proposed TLP-ESD comparison lookup diagram. By comparing the characteristics of the GaAs-based device with those of the Si-based device, the differences based on the electro-thermal characteristics of the substrate were quantitatively compared and analyzed in terms of ESD layout area, physical failure, and TCAD simulation.",

keywords = "HBM ESD, Lookup diagram, TCAD, TLP",

author = "Hyeokjae Lee and Kim, {Dong Sung} and Noh, {Jae Young} and Youngboo Kim and Jisun Park and Hyungsoon Shin",

note = "Publisher Copyright: {\textcopyright} 2023 IEEE.; 7th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2023 ; Conference date: 07-03-2023 Through 10-03-2023",

year = "2023",

doi = "10.1109/EDTM55494.2023.10102935",

language = "English",

series = "7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023",

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Lee, H, Kim, DS, Noh, JY, Kim, Y, Park, J & Shin, H 2023, Predictable ESD Criteria with Proposed Comparison Diagram between TLP and HBM ESD for Various Device Technologies and Different Substrates. in 7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023. 7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023, Institute of Electrical and Electronics Engineers Inc., 7th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2023, Seoul, Korea, Republic of, 7/03/23. https://doi.org/10.1109/EDTM55494.2023.10102935

Predictable ESD Criteria with Proposed Comparison Diagram between TLP and HBM ESD for Various Device Technologies and Different Substrates. / Lee, Hyeokjae; Kim, Dong Sung; Noh, Jae Young et al.
7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023. Institute of Electrical and Electronics Engineers Inc., 2023. (7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Park, Jisun

AU - Shin, Hyungsoon

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AB - In this paper, the correlation between the measured TLP results and HBM-ESD results was quantitatively revealed by using a proposed TLP-ESD comparison lookup diagram. By comparing the characteristics of the GaAs-based device with those of the Si-based device, the differences based on the electro-thermal characteristics of the substrate were quantitatively compared and analyzed in terms of ESD layout area, physical failure, and TCAD simulation.

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KW - Lookup diagram

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Lee H, Kim DS, Noh JY, Kim Y, Park J, Shin H. Predictable ESD Criteria with Proposed Comparison Diagram between TLP and HBM ESD for Various Device Technologies and Different Substrates. In 7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023. Institute of Electrical and Electronics Engineers Inc. 2023. (7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023). doi: 10.1109/EDTM55494.2023.10102935

Predictable ESD Criteria with Proposed Comparison Diagram between TLP and HBM ESD for Various Device Technologies and Different Substrates

Abstract

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Bibliographical note

Keywords

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