Power law behavior of magnetoresistance in tris(8-hydroxyquinolinato) aluminum-based organic light-emitting diodes

Hoju Kang; Chan Hyuk Park; Jongsun Lim; Changjin Lee; Woun Kang; Choon Sup Yoon

doi:10.1016/j.orgel.2012.02.025

Power law behavior of magnetoresistance in tris(8-hydroxyquinolinato) aluminum-based organic light-emitting diodes

Hoju Kang, Chan Hyuk Park, Jongsun Lim, Changjin Lee, Woun Kang, Choon Sup Yoon

Department of Physics

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

Long-term current drift and dielectric relaxation in organic thin films of a single-layer structure pose a serious problem for the accurate measurement of magnetoresistance at low magnetic fields. A new measurement scheme was devised to minimize errors and to report that the magnetoresistance in tris(8-hydroxyquinolinato)aluminum obeys a power law on the magnetic field at 300, 100, and 4.2 K in an entire range from 1 to 140 mT. The exponent of the power increases gradually from 0.47 for a bias voltage of 3 V to 0.58 for a bias voltage of 8 V. The magnetoresistance was observable above the threshold voltage only and its sign was always negative.

Original language	English
Pages (from-to)	1012-1017
Number of pages	6
Journal	Organic Electronics
Volume	13
Issue number	6
DOIs	https://doi.org/10.1016/j.orgel.2012.02.025
State	Published - Jun 2012

Bibliographical note

Funding Information:
This work was supported by the Information Technology R&D program of Ministry of Knowledge Economy ( 2008-F024-01 ) and the Global Partnership Program ( R11-2007-012-03001-0 ) of the Ministry of Education, Science and Technology.

Keywords

Magnetoconductance
Magnetocurrent
Organic light-emitting diode
Organic magnetoresistance
Organic semiconductors
Tris(8-hydroxyquinolinato)aluminum

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10.1016/j.orgel.2012.02.025

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@article{052b78221aac43f9971a66fe04bc5313,

title = "Power law behavior of magnetoresistance in tris(8-hydroxyquinolinato) aluminum-based organic light-emitting diodes",

abstract = "Long-term current drift and dielectric relaxation in organic thin films of a single-layer structure pose a serious problem for the accurate measurement of magnetoresistance at low magnetic fields. A new measurement scheme was devised to minimize errors and to report that the magnetoresistance in tris(8-hydroxyquinolinato)aluminum obeys a power law on the magnetic field at 300, 100, and 4.2 K in an entire range from 1 to 140 mT. The exponent of the power increases gradually from 0.47 for a bias voltage of 3 V to 0.58 for a bias voltage of 8 V. The magnetoresistance was observable above the threshold voltage only and its sign was always negative.",

keywords = "Magnetoconductance, Magnetocurrent, Organic light-emitting diode, Organic magnetoresistance, Organic semiconductors, Tris(8-hydroxyquinolinato)aluminum",

author = "Hoju Kang and Park, {Chan Hyuk} and Jongsun Lim and Changjin Lee and Woun Kang and Yoon, {Choon Sup}",

note = "Funding Information: This work was supported by the Information Technology R&D program of Ministry of Knowledge Economy ( 2008-F024-01 ) and the Global Partnership Program ( R11-2007-012-03001-0 ) of the Ministry of Education, Science and Technology.",

year = "2012",

month = jun,

doi = "10.1016/j.orgel.2012.02.025",

language = "English",

volume = "13",

pages = "1012--1017",

journal = "Organic Electronics",

issn = "1566-1199",

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T1 - Power law behavior of magnetoresistance in tris(8-hydroxyquinolinato) aluminum-based organic light-emitting diodes

AU - Kang, Hoju

AU - Park, Chan Hyuk

AU - Lim, Jongsun

AU - Lee, Changjin

AU - Kang, Woun

AU - Yoon, Choon Sup

N1 - Funding Information: This work was supported by the Information Technology R&D program of Ministry of Knowledge Economy ( 2008-F024-01 ) and the Global Partnership Program ( R11-2007-012-03001-0 ) of the Ministry of Education, Science and Technology.

PY - 2012/6

Y1 - 2012/6

N2 - Long-term current drift and dielectric relaxation in organic thin films of a single-layer structure pose a serious problem for the accurate measurement of magnetoresistance at low magnetic fields. A new measurement scheme was devised to minimize errors and to report that the magnetoresistance in tris(8-hydroxyquinolinato)aluminum obeys a power law on the magnetic field at 300, 100, and 4.2 K in an entire range from 1 to 140 mT. The exponent of the power increases gradually from 0.47 for a bias voltage of 3 V to 0.58 for a bias voltage of 8 V. The magnetoresistance was observable above the threshold voltage only and its sign was always negative.

AB - Long-term current drift and dielectric relaxation in organic thin films of a single-layer structure pose a serious problem for the accurate measurement of magnetoresistance at low magnetic fields. A new measurement scheme was devised to minimize errors and to report that the magnetoresistance in tris(8-hydroxyquinolinato)aluminum obeys a power law on the magnetic field at 300, 100, and 4.2 K in an entire range from 1 to 140 mT. The exponent of the power increases gradually from 0.47 for a bias voltage of 3 V to 0.58 for a bias voltage of 8 V. The magnetoresistance was observable above the threshold voltage only and its sign was always negative.

KW - Magnetoconductance

KW - Magnetocurrent

KW - Organic light-emitting diode

KW - Organic magnetoresistance

KW - Organic semiconductors

KW - Tris(8-hydroxyquinolinato)aluminum

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DO - 10.1016/j.orgel.2012.02.025

M3 - Article

AN - SCOPUS:84859916935

SN - 1566-1199

VL - 13

SP - 1012

EP - 1017

JO - Organic Electronics

JF - Organic Electronics

IS - 6

ER -

Power law behavior of magnetoresistance in tris(8-hydroxyquinolinato) aluminum-based organic light-emitting diodes

Abstract

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Keywords

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