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Polymorphism of indium oxide: Materials physics of orthorhombic In
2
O
3
Aron Walsh
, David O. Scanlon
Department of Physics
Research output
:
Contribution to journal
›
Article
›
peer-review
25
Scopus citations
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2
O
3
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Engineering
Conductive
100%
Band Structure
50%
Ambient Pressure
50%
Oxygen Vacancy
50%
Charged State
50%
Sublattice
50%
Valence Band
50%
Defect Structure
50%
Electronic State
50%
Energy Levels
50%
Band Gap
50%
Chemistry
Indium
100%
Electronic State
50%
Band Gap
50%
Optoelectronics
50%
Valence Band
50%
Oxygen Vacancy
50%
Density Functional Theory Approaches
50%
Electronic Band Structure
50%
Crystal Point Defect
50%
Wave Function
50%
Crystal Defect
50%
Material Science
Indium
100%
Oxide Compound
100%
Density
25%
Oxygen Vacancy
25%
Materials Property
25%
Point Defect
25%
Energy Levels
25%
Crystal Defect
25%