Polymorphism of indium oxide: Materials physics of orthorhombic In ₂O₃

Engineering

• Conductive 100%
• Band Structure 50%
• Ambient Pressure 50%
• Oxygen Vacancy 50%
• Charged State 50%
• Sublattice 50%
• Valence Band 50%
• Defect Structure 50%
• Electronic State 50%
• Energy Levels 50%
• Band Gap 50%

Chemistry

• Indium 100%
• Electronic State 50%
• Band Gap 50%
• Optoelectronics 50%
• Valence Band 50%
• Oxygen Vacancy 50%
• Density Functional Theory Approaches 50%
• Electronic Band Structure 50%
• Crystal Point Defect 50%
• Wave Function 50%
• Crystal Defect 50%

Material Science

• Indium 100%
• Oxide Compound 100%
• Density 25%
• Oxygen Vacancy 25%
• Materials Property 25%
• Point Defect 25%
• Energy Levels 25%
• Crystal Defect 25%