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Physical analysis for saturation behavior of hot-carrier degradation in lightly doped drain N-channel metal-oxide-semiconductor field effect transistors

  • Jung Suk Goo
  • , Hyungsoon Shin
  • , Hyunsang Hwang
  • , Dae Gwan Kang
  • , Dong Hyuk Ju

Research output: Contribution to journal › Article › peer-review

23 Scopus citations

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