Abstract
Due to the exceptional electrical and optical properties of graphene, public interest has grown rapidly since the material was exfoliated onto SiO2 in 2004 [1-3]. Other two dimensional (2D) crystal materials such as MoS2, hBN, and WSe2, individually or in combination with graphene, also have shown intriguing properties. One of the interesting applications is using the 2D heterojunction as a photodetector. There have been literatures reported on graphene-MoS2 heterojunction photodetectors, claiming the photoresponse mechanism as a photovoltaic effect (PV), which is due to the separation of electron-hole pairs created in MoS2 at less than 700 nm wavelengths [4, 5]. In this paper, we report photothermal electric effect (PTE) of a multilayer MoS2-graphene heterojunction photodetector based on the large differences of Seebeck coefficients between MoS2 (-700 μV/K) [6] and graphene (-50 μV/K) [7].
Original language | English |
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Title of host publication | 73rd Annual Device Research Conference, DRC 2015 |
Publisher | Institute of Electrical and Electronics Engineers Inc. |
Pages | 121-122 |
Number of pages | 2 |
ISBN (Electronic) | 9781467381345 |
DOIs | |
State | Published - 3 Aug 2015 |
Event | 73rd Annual Device Research Conference, DRC 2015 - Columbus, United States Duration: 21 Jun 2015 → 24 Jun 2015 |
Publication series
Name | Device Research Conference - Conference Digest, DRC |
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Volume | 2015-August |
ISSN (Print) | 1548-3770 |
Conference
Conference | 73rd Annual Device Research Conference, DRC 2015 |
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Country/Territory | United States |
City | Columbus |
Period | 21/06/15 → 24/06/15 |
Bibliographical note
Publisher Copyright:© 2015 IEEE.
Keywords
- Electric fields
- Junctions
- Silicon
- Substrates
- Thickness measurement