Photothermal electric effect of multilayer MoS2-graphene heterojunction

Joon Young Kwak, Jeonghyun Hwang, Brian Calderon, Hussain Alsalman, Brian Schutter, Michael G. Spencer

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Due to the exceptional electrical and optical properties of graphene, public interest has grown rapidly since the material was exfoliated onto SiO2 in 2004 [1-3]. Other two dimensional (2D) crystal materials such as MoS2, hBN, and WSe2, individually or in combination with graphene, also have shown intriguing properties. One of the interesting applications is using the 2D heterojunction as a photodetector. There have been literatures reported on graphene-MoS2 heterojunction photodetectors, claiming the photoresponse mechanism as a photovoltaic effect (PV), which is due to the separation of electron-hole pairs created in MoS2 at less than 700 nm wavelengths [4, 5]. In this paper, we report photothermal electric effect (PTE) of a multilayer MoS2-graphene heterojunction photodetector based on the large differences of Seebeck coefficients between MoS2 (-700 μV/K) [6] and graphene (-50 μV/K) [7].

Original languageEnglish
Title of host publication73rd Annual Device Research Conference, DRC 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages121-122
Number of pages2
ISBN (Electronic)9781467381345
DOIs
StatePublished - 3 Aug 2015
Event73rd Annual Device Research Conference, DRC 2015 - Columbus, United States
Duration: 21 Jun 201524 Jun 2015

Publication series

NameDevice Research Conference - Conference Digest, DRC
Volume2015-August
ISSN (Print)1548-3770

Conference

Conference73rd Annual Device Research Conference, DRC 2015
Country/TerritoryUnited States
CityColumbus
Period21/06/1524/06/15

Bibliographical note

Publisher Copyright:
© 2015 IEEE.

Keywords

  • Electric fields
  • Junctions
  • Silicon
  • Substrates
  • Thickness measurement

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