A detailed understanding of charge-carrier behavior could provide new avenues to improve the performance of the solar cell by enhancing the active materials and electronic properties. In the present work, the transport mechanism of photogenerated carriers in Cu(In,Ga)Se2 or CIGS)-based solar cells is investigated by analysis of the temperature-dependent current density-voltage (J-V) curves obtained under various illumination (i.e., dark, AM 1.5G, 650 nm, and 405 nm). The results demonstrate that J-V curve distortion, termed the “roll-over” effect, is significantly correlated with the illumination wavelength and, more importantly, is strongly associated with the persistent characteristics of the CIGS solar cell. In addition, the nature of the photo-induced defects and their influence on the transport mechanism of the photogenerated carriers were investigated via deep level capacitance profiling (DLCP) and admittance spectroscopy (AS) under various illumination conditions. The photo-capacitance results indicate distinct spatial distributions and persistent behaviors depending upon the illumination wavelength. Based on the findings in this work, the origin of the non-ideal J-V behavior in the CIGS solar cell is explained, and the spatial defect distribution and illumination wavelength sensitivity are discussed.
Bibliographical noteFunding Information:
This research was supported by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education (NRF-2018R1A6A1A03025340), Technology Development Program to Solve Climate Changes of the National Research Foundation of Korea (NRF) funded by the Ministry of Science and ICT (grant no. 2016M1A2A2936753 and 2016M1A2A2936784), and the framework of the Research and Development Program of the Korea Institute of Energy Research (KIER) (C0-2451).
- Band structures
- Cu(In,Ga)Se thin film solar cells
- J-V distortion
- Persistent photo-capacitance
- Photo-induced defect