TY - JOUR
T1 - Photon-induced defects and dynamics of photogenerated carriers in Cu(In,Ga)Se2 thin film solar cells
AU - Cho, Yunae
AU - Hwang, Jiseon
AU - Jeong, Inyoung
AU - Gwak, Jihye
AU - Yun, Jae Ho
AU - Kim, Kihwan
AU - Jo, William
N1 - Publisher Copyright:
© 2020
PY - 2021/1
Y1 - 2021/1
N2 - A detailed understanding of charge-carrier behavior could provide new avenues to improve the performance of the solar cell by enhancing the active materials and electronic properties. In the present work, the transport mechanism of photogenerated carriers in Cu(In,Ga)Se2 or CIGS)-based solar cells is investigated by analysis of the temperature-dependent current density-voltage (J-V) curves obtained under various illumination (i.e., dark, AM 1.5G, 650 nm, and 405 nm). The results demonstrate that J-V curve distortion, termed the “roll-over” effect, is significantly correlated with the illumination wavelength and, more importantly, is strongly associated with the persistent characteristics of the CIGS solar cell. In addition, the nature of the photo-induced defects and their influence on the transport mechanism of the photogenerated carriers were investigated via deep level capacitance profiling (DLCP) and admittance spectroscopy (AS) under various illumination conditions. The photo-capacitance results indicate distinct spatial distributions and persistent behaviors depending upon the illumination wavelength. Based on the findings in this work, the origin of the non-ideal J-V behavior in the CIGS solar cell is explained, and the spatial defect distribution and illumination wavelength sensitivity are discussed.
AB - A detailed understanding of charge-carrier behavior could provide new avenues to improve the performance of the solar cell by enhancing the active materials and electronic properties. In the present work, the transport mechanism of photogenerated carriers in Cu(In,Ga)Se2 or CIGS)-based solar cells is investigated by analysis of the temperature-dependent current density-voltage (J-V) curves obtained under various illumination (i.e., dark, AM 1.5G, 650 nm, and 405 nm). The results demonstrate that J-V curve distortion, termed the “roll-over” effect, is significantly correlated with the illumination wavelength and, more importantly, is strongly associated with the persistent characteristics of the CIGS solar cell. In addition, the nature of the photo-induced defects and their influence on the transport mechanism of the photogenerated carriers were investigated via deep level capacitance profiling (DLCP) and admittance spectroscopy (AS) under various illumination conditions. The photo-capacitance results indicate distinct spatial distributions and persistent behaviors depending upon the illumination wavelength. Based on the findings in this work, the origin of the non-ideal J-V behavior in the CIGS solar cell is explained, and the spatial defect distribution and illumination wavelength sensitivity are discussed.
KW - Band structures
KW - Cu(In,Ga)Se thin film solar cells
KW - J-V distortion
KW - Persistent photo-capacitance
KW - Photo-induced defect
UR - http://www.scopus.com/inward/record.url?scp=85096119384&partnerID=8YFLogxK
U2 - 10.1016/j.solmat.2020.110860
DO - 10.1016/j.solmat.2020.110860
M3 - Article
AN - SCOPUS:85096119384
SN - 0927-0248
VL - 220
JO - Solar Energy Materials and Solar Cells
JF - Solar Energy Materials and Solar Cells
M1 - 110860
ER -