Photoinduced memory with hybrid integration of an organic fullerene derivative and an inorganic nanogap-embedded field-effect transistor for low-voltage operation

A photoinduced hybrid memory operating with a low voltage is demonstrated by embedding the fullerene derivative, [6,6]-phenyl-C ₆₁-butyric acid methyl ester (PCBM), into a conventional silicon-channel FET with a nanogap, upon application of both electrical and optical pulses. The nanogap geometry allows high mobility, which is the same as that of conventional silicon and organic-inorganic hybrid integration without thermal instability.