Photogenerated plasmons in GaAs_1-xBi_x

Engineering

• Low-Temperature 100%
• Nanosecond 50%
• Temperature Time 50%
• Laser Excitation 50%
• Continuous Wave 50%
• Valence Band 50%
• Carrier Lifetime 50%
• Band Gap 50%
• Free Electron 50%

Chemistry

• Bismuth 100%
• Plasmon 100%
• Photoluminescence 50%
• Band Gap 50%
• Valence Band 50%
• Light Scattering 50%
• Free Electron 50%

Material Science

• Bismuth 100%
• Photoluminescence 50%
• Carrier Lifetime 50%