Photogenerated plasmons in GaAs1-xBix

S. Yoon; M. J. Seong; B. Fluegel; A. Mascarenhas; S. Tixier; T. Tiedje

doi:10.1063/1.2770760

Photogenerated plasmons in GaAs_1-xBi_x

S. Yoon, M. J. Seong, B. Fluegel, A. Mascarenhas, S. Tixier, T. Tiedje

Department of Physics

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

Light scattering measurements in the dilute isoelectronically doped alloy Ga As1-x Bix reveal a large free electron population photogenerated by continuous-wave laser excitation at low temperature. Low-temperature time-resolved photoluminescence of the bismuth related near-band-gap states show carrier lifetimes of several nanoseconds. The authors attribute this to trapping of photoexcited holes at bismuth pair or cluster states located near the valence band maximum.

Original language	English
Article number	082101
Journal	Applied Physics Letters
Volume	91
Issue number	8
DOIs	https://doi.org/10.1063/1.2770760
State	Published - 2007

Access to Document

10.1063/1.2770760

Cite this

@article{3871229f31374075866239317f1d319d,

title = "Photogenerated plasmons in GaAs1-xBix",

abstract = "Light scattering measurements in the dilute isoelectronically doped alloy Ga As1-x Bix reveal a large free electron population photogenerated by continuous-wave laser excitation at low temperature. Low-temperature time-resolved photoluminescence of the bismuth related near-band-gap states show carrier lifetimes of several nanoseconds. The authors attribute this to trapping of photoexcited holes at bismuth pair or cluster states located near the valence band maximum.",

author = "S. Yoon and Seong, {M. J.} and B. Fluegel and A. Mascarenhas and S. Tixier and T. Tiedje",

note = "Funding Information: The authors acknowledge the financial support of the Department of Energy, Office of Science, Basic Energy Sciences under Grant No. DE-AC36-83CH10093.",

year = "2007",

doi = "10.1063/1.2770760",

language = "English",

volume = "91",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "8",

}

TY - JOUR

T1 - Photogenerated plasmons in GaAs1-xBix

AU - Yoon, S.

AU - Seong, M. J.

AU - Fluegel, B.

AU - Mascarenhas, A.

AU - Tixier, S.

AU - Tiedje, T.

N1 - Funding Information: The authors acknowledge the financial support of the Department of Energy, Office of Science, Basic Energy Sciences under Grant No. DE-AC36-83CH10093.

PY - 2007

Y1 - 2007

N2 - Light scattering measurements in the dilute isoelectronically doped alloy Ga As1-x Bix reveal a large free electron population photogenerated by continuous-wave laser excitation at low temperature. Low-temperature time-resolved photoluminescence of the bismuth related near-band-gap states show carrier lifetimes of several nanoseconds. The authors attribute this to trapping of photoexcited holes at bismuth pair or cluster states located near the valence band maximum.

AB - Light scattering measurements in the dilute isoelectronically doped alloy Ga As1-x Bix reveal a large free electron population photogenerated by continuous-wave laser excitation at low temperature. Low-temperature time-resolved photoluminescence of the bismuth related near-band-gap states show carrier lifetimes of several nanoseconds. The authors attribute this to trapping of photoexcited holes at bismuth pair or cluster states located near the valence band maximum.

UR - http://www.scopus.com/inward/record.url?scp=34548281226&partnerID=8YFLogxK

U2 - 10.1063/1.2770760

DO - 10.1063/1.2770760

M3 - Article

AN - SCOPUS:34548281226

SN - 0003-6951

VL - 91

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 8

M1 - 082101

ER -

Photogenerated plasmons in GaAs1-xBix

Abstract

Access to Document

Fingerprint

Cite this

Photogenerated plasmons in GaAs_1-xBi_x