Photogenerated plasmons in GaAs1-xBix

S. Yoon, M. J. Seong, B. Fluegel, A. Mascarenhas, S. Tixier, T. Tiedje

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Light scattering measurements in the dilute isoelectronically doped alloy Ga As1-x Bix reveal a large free electron population photogenerated by continuous-wave laser excitation at low temperature. Low-temperature time-resolved photoluminescence of the bismuth related near-band-gap states show carrier lifetimes of several nanoseconds. The authors attribute this to trapping of photoexcited holes at bismuth pair or cluster states located near the valence band maximum.

Original languageEnglish
Article number082101
JournalApplied Physics Letters
Issue number8
StatePublished - 2007

Bibliographical note

Funding Information:
The authors acknowledge the financial support of the Department of Energy, Office of Science, Basic Energy Sciences under Grant No. DE-AC36-83CH10093.


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