Photogenerated plasmons in GaAs1-xBix

S. Yoon, M. J. Seong, B. Fluegel, A. Mascarenhas, S. Tixier, T. Tiedje

Research output: Contribution to journalArticlepeer-review

6 Scopus citations

Abstract

Light scattering measurements in the dilute isoelectronically doped alloy Ga As1-x Bix reveal a large free electron population photogenerated by continuous-wave laser excitation at low temperature. Low-temperature time-resolved photoluminescence of the bismuth related near-band-gap states show carrier lifetimes of several nanoseconds. The authors attribute this to trapping of photoexcited holes at bismuth pair or cluster states located near the valence band maximum.

Original languageEnglish
Article number082101
JournalApplied Physics Letters
Volume91
Issue number8
DOIs
StatePublished - 2007

Fingerprint

Dive into the research topics of 'Photogenerated plasmons in GaAs1-xBix'. Together they form a unique fingerprint.

Cite this