Abstract
The interplay between free and bound charges in two-dimensional (2D) semiconductor/ferroelectric oxide structures is responsible for the unique opto-electrical properties of these structures. In this study, we vertically combined the 2D layered semiconductors MoS2 (n-type) and WSe2 (p-type) with a ferroelectric oxide (PbTiO3) and found that a ferroelectric polarization induced accumulation or depletion in the layered materials. The heterostructures exhibited polarization-dependent charge distribution and pinched hysteresis. We show that polarization at the interface promoted efficient charge separation of photo-generated carriers in the 2D layers. Optical control of electrical transport was effectively achieved in the MoS2 layers. This study potentially opens up new applications for semiconductor/ferroelectric systems in electronic devices.
Original language | English |
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Pages (from-to) | 3724-3729 |
Number of pages | 6 |
Journal | Journal of Materials Chemistry C |
Volume | 8 |
Issue number | 11 |
DOIs | |
State | Published - 21 Mar 2020 |
Bibliographical note
Publisher Copyright:© 2020 The Royal Society of Chemistry.