Perpendicular magnetization of fept alloy films epitaxially grown on Si(100)

Jae Young Ahn; Nyun Jong Lee; Tae Hee Kim

doi:10.4283/JMAG.2009.14.4.144

Perpendicular magnetization of fept alloy films epitaxially grown on Si(100)

Jae Young Ahn, Nyun Jong Lee, Tae Hee Kim

Department of Physics

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

This study examined the structure and perpendicular magnetization of FePt films grown on Pt/Fe/MgO(100) buffered Si(100) substrates by molecular beam epitaxy. The [Fe(0.17nm)/Pt(0.2nm)]_N multilayers were prepared at room temperature to form a L1₀-FePt phase after vacuum annealing. Perpendicular magnetic anisotropy (PMA) was observed in the films after at least 15 repetitions (N = 15) of Fe/Pt deposition and annealing at 300°C for 1 hour. Careful structural analysis of the films was carried out by x-ray diffraction and high-resolution transmission electron microscopy. These results will assist in the development of the low temperature L1₀FePt deposition process, which will be essential for future extremely high density magnetic recording media.

Original language	English
Pages (from-to)	144-146
Number of pages	3
Journal	Journal of Magnetics
Volume	14
Issue number	4
DOIs	https://doi.org/10.4283/JMAG.2009.14.4.144
State	Published - 2009

Keywords

Epitaxial growth
L1 FePt
Molecular beam epitaxy
Perpendicular magnetic anisotropy

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10.4283/JMAG.2009.14.4.144

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title = "Perpendicular magnetization of fept alloy films epitaxially grown on Si(100)",

abstract = "This study examined the structure and perpendicular magnetization of FePt films grown on Pt/Fe/MgO(100) buffered Si(100) substrates by molecular beam epitaxy. The [Fe(0.17nm)/Pt(0.2nm)]N multilayers were prepared at room temperature to form a L10-FePt phase after vacuum annealing. Perpendicular magnetic anisotropy (PMA) was observed in the films after at least 15 repetitions (N = 15) of Fe/Pt deposition and annealing at 300°C for 1 hour. Careful structural analysis of the films was carried out by x-ray diffraction and high-resolution transmission electron microscopy. These results will assist in the development of the low temperature L10FePt deposition process, which will be essential for future extremely high density magnetic recording media.",

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AU - Ahn, Jae Young

AU - Lee, Nyun Jong

AU - Kim, Tae Hee

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N2 - This study examined the structure and perpendicular magnetization of FePt films grown on Pt/Fe/MgO(100) buffered Si(100) substrates by molecular beam epitaxy. The [Fe(0.17nm)/Pt(0.2nm)]N multilayers were prepared at room temperature to form a L10-FePt phase after vacuum annealing. Perpendicular magnetic anisotropy (PMA) was observed in the films after at least 15 repetitions (N = 15) of Fe/Pt deposition and annealing at 300°C for 1 hour. Careful structural analysis of the films was carried out by x-ray diffraction and high-resolution transmission electron microscopy. These results will assist in the development of the low temperature L10FePt deposition process, which will be essential for future extremely high density magnetic recording media.

AB - This study examined the structure and perpendicular magnetization of FePt films grown on Pt/Fe/MgO(100) buffered Si(100) substrates by molecular beam epitaxy. The [Fe(0.17nm)/Pt(0.2nm)]N multilayers were prepared at room temperature to form a L10-FePt phase after vacuum annealing. Perpendicular magnetic anisotropy (PMA) was observed in the films after at least 15 repetitions (N = 15) of Fe/Pt deposition and annealing at 300°C for 1 hour. Careful structural analysis of the films was carried out by x-ray diffraction and high-resolution transmission electron microscopy. These results will assist in the development of the low temperature L10FePt deposition process, which will be essential for future extremely high density magnetic recording media.

KW - Epitaxial growth

KW - L1 FePt

KW - Molecular beam epitaxy

KW - Perpendicular magnetic anisotropy

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JO - Journal of Magnetics

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Perpendicular magnetization of fept alloy films epitaxially grown on Si(100)

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Keywords

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