@inproceedings{9f92c17d6e2b44dc8e9555547e269e6e,
title = "Performance breakthrough in NOR flash memory with dopant-segregated Schottky-barrier (DSSB) SONOS devices",
abstract = "A novel dopant segregated Schottky barrier (DSSB) SONOS device as a form of double-gate (DG) is demonstrated for NOR Flash memory applications. The DSSB also applies to all-around-gate (AAG) SONOS devices. The source side injection caused by sharp energy band bending in the DSSB device results in a high-speed programming (Vth shift of 4.2V @ 320ns) at a low program bias (V gs/Vds=7V/3V). Moreover, faster program speed in a narrower fin width (Wfin) due to its low parasitic resistance and enhanced gate controllability is achieved. Drain disturbance-free characteristics in a programmed cell are confirmed as well.",
author = "Choi, \{Sung Jin\} and Han, \{Jin Woo\} and Sungho Kim and Moon, \{Dong Il\} and Jang, \{Moon Gyu\} and Jin, \{Su Kim\} and Kwang, \{Hee Kim\} and Gi, \{Sung Lee\} and Jae, \{Sub Oh\} and Myong, \{Ho Song\} and Yun, \{Chang Park\} and Jeoung, \{Woo Kim\} and Choi, \{Yang Kyu\}",
year = "2009",
language = "English",
isbn = "9784863480094",
series = "Digest of Technical Papers - Symposium on VLSI Technology",
pages = "222--223",
booktitle = "2009 Symposium on VLSI Technology, VLSIT 2009",
note = "2009 Symposium on VLSI Technology, VLSIT 2009 ; Conference date: 16-06-2009 Through 18-06-2009",
}