Abstract
We report on the fabrication of ZnO-channel charge injection memory thin-film transistors (TFTs). Our non-volatile memory TFT has a thin pentacene on top of a dielectric sandwich which has 3 nm-thin inserted potential well as a hole trap layer. The thin pentacene in contact with Au top electrode supports effective hole injection from pentacene into the inserted well under +8 V programming gate pulse while those injected holes are effectively ejected out under -8 V pulse, so that ZnO channel below the dielectric may have two different current states: write and erase. Our device operates at less than 2 V and shows a retention time of about 1000 s after programmed at +8 V, along with an effective program/erase ratio of 5-20.
Original language | English |
---|---|
Pages (from-to) | 159-163 |
Number of pages | 5 |
Journal | Organic Electronics |
Volume | 11 |
Issue number | 1 |
DOIs | |
State | Published - Jan 2010 |
Keywords
- Flash memory
- Organic-inorganic nanohybrid
- Pentacene
- Thin-film transistor
- ZnO