Pentacene thin-film on organic/inorganic nanohybrid dielectrics for ZnO charge injection memory transistor

Sung Hoon Cha, Aaron Park, Kwang H. Lee, Seongil Im, Byoung H. Lee, Myung M. Sung

Research output: Contribution to journalArticlepeer-review

14 Scopus citations

Abstract

We report on the fabrication of ZnO-channel charge injection memory thin-film transistors (TFTs). Our non-volatile memory TFT has a thin pentacene on top of a dielectric sandwich which has 3 nm-thin inserted potential well as a hole trap layer. The thin pentacene in contact with Au top electrode supports effective hole injection from pentacene into the inserted well under +8 V programming gate pulse while those injected holes are effectively ejected out under -8 V pulse, so that ZnO channel below the dielectric may have two different current states: write and erase. Our device operates at less than 2 V and shows a retention time of about 1000 s after programmed at +8 V, along with an effective program/erase ratio of 5-20.

Original languageEnglish
Pages (from-to)159-163
Number of pages5
JournalOrganic Electronics
Volume11
Issue number1
DOIs
StatePublished - Jan 2010

Keywords

  • Flash memory
  • Organic-inorganic nanohybrid
  • Pentacene
  • Thin-film transistor
  • ZnO

Fingerprint

Dive into the research topics of 'Pentacene thin-film on organic/inorganic nanohybrid dielectrics for ZnO charge injection memory transistor'. Together they form a unique fingerprint.

Cite this