Patterning of type-II Dirac semimetal PtTe2 for optimized interface of tellurene optoelectronic device

Duc Anh Nguyen, Dae Young Park, Juchan Lee, Ngoc Thanh Duong, Chulho Park, Duc Hieu Nguyen, Thi Suong Le, Dongseok Suh, Heejun Yang, Mun Seok Jeong

Research output: Contribution to journalArticlepeer-review

23 Scopus citations

Abstract

The controllable transformation between the semiconductor and metal plays a key role for the electronic and optoelectronic applications of atomically thin two-dimensional (2D) layered materials. Herein, we report laser-driven synthesis of PtTe2 from Pt-deposited 2D tellurium (Te) for optimized interface of 2D Te optoelectronic device. The size and shape of the synthesized area of the PtTe2 can be designable in the laser irradiation process. The electrical properties of 2D Te change from p-type semiconducting to metallic due to the formation of semimetallic PtTe2 after laser irradiation, increasing the conductivity by factors of 500. In addition, by using PtTe2 contact, the carrier mobility and photoresponsivity of the 2D Te devices could be greatly enhanced. Our photodetector shows high responsivity and detectivity up to 5.8 × 104 A W−1 and 5.31 × 1011 Jones, respectively. Ideal interfaces for highly performing optoelectronics devices could be realized by an original way of depositing Pt nanoparticles and patterning a semimetal compound based on the Pt at the junction.

Original languageEnglish
Article number106049
JournalNano Energy
Volume86
DOIs
StatePublished - Aug 2021

Bibliographical note

Funding Information:
This research was supported by National Research Foundation of Korea (NRF) funded by Ministry of Science and ICT ( NRF-2019M3D1A1078299 and NRF-2019R1A2B5B02070657 ). H. Y. acknowledges support from the National Research Foundation of Korea (NRF) under grant no. NRF-2018M3D1A1058793 .

Publisher Copyright:
© 2021 Elsevier Ltd

Keywords

  • FET
  • Laser irradiation
  • Photodetector
  • PtTe
  • Raman scattering
  • Tellurene

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