Patterning of type-II Dirac semimetal PtTe2 for optimized interface of tellurene optoelectronic device

Duc Anh Nguyen; Dae Young Park; Juchan Lee; Ngoc Thanh Duong; Chulho Park; Duc Hieu Nguyen; Thi Suong Le; Dongseok Suh; Heejun Yang; Mun Seok Jeong

doi:10.1016/j.nanoen.2021.106049

Patterning of type-II Dirac semimetal PtTe₂ for optimized interface of tellurene optoelectronic device

Duc Anh Nguyen, Dae Young Park, Juchan Lee, Ngoc Thanh Duong, Chulho Park, Duc Hieu Nguyen, Thi Suong Le, Dongseok Suh, Heejun Yang, Mun Seok Jeong

Department of Physics

Research output: Contribution to journal › Article › peer-review

29 Scopus citations

Abstract

The controllable transformation between the semiconductor and metal plays a key role for the electronic and optoelectronic applications of atomically thin two-dimensional (2D) layered materials. Herein, we report laser-driven synthesis of PtTe₂ from Pt-deposited 2D tellurium (Te) for optimized interface of 2D Te optoelectronic device. The size and shape of the synthesized area of the PtTe₂ can be designable in the laser irradiation process. The electrical properties of 2D Te change from p-type semiconducting to metallic due to the formation of semimetallic PtTe₂ after laser irradiation, increasing the conductivity by factors of 500. In addition, by using PtTe₂ contact, the carrier mobility and photoresponsivity of the 2D Te devices could be greatly enhanced. Our photodetector shows high responsivity and detectivity up to 5.8 × 10⁴ A W⁻¹ and 5.31 × 10¹¹ Jones, respectively. Ideal interfaces for highly performing optoelectronics devices could be realized by an original way of depositing Pt nanoparticles and patterning a semimetal compound based on the Pt at the junction.

Original language	English
Article number	106049
Journal	Nano Energy
Volume	86
DOIs	https://doi.org/10.1016/j.nanoen.2021.106049
State	Published - Aug 2021

Bibliographical note

Funding Information:
This research was supported by National Research Foundation of Korea (NRF) funded by Ministry of Science and ICT ( NRF-2019M3D1A1078299 and NRF-2019R1A2B5B02070657 ). H. Y. acknowledges support from the National Research Foundation of Korea (NRF) under grant no. NRF-2018M3D1A1058793 .

Publisher Copyright:
© 2021 Elsevier Ltd

Keywords

FET
Laser irradiation
Photodetector
PtTe
Raman scattering
Tellurene

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This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1016/j.nanoen.2021.106049

Cite this

@article{144dbabb9fda4925ab7b6e7339f1f621,

title = "Patterning of type-II Dirac semimetal PtTe2 for optimized interface of tellurene optoelectronic device",

abstract = "The controllable transformation between the semiconductor and metal plays a key role for the electronic and optoelectronic applications of atomically thin two-dimensional (2D) layered materials. Herein, we report laser-driven synthesis of PtTe2 from Pt-deposited 2D tellurium (Te) for optimized interface of 2D Te optoelectronic device. The size and shape of the synthesized area of the PtTe2 can be designable in the laser irradiation process. The electrical properties of 2D Te change from p-type semiconducting to metallic due to the formation of semimetallic PtTe2 after laser irradiation, increasing the conductivity by factors of 500. In addition, by using PtTe2 contact, the carrier mobility and photoresponsivity of the 2D Te devices could be greatly enhanced. Our photodetector shows high responsivity and detectivity up to 5.8 × 104 A W−1 and 5.31 × 1011 Jones, respectively. Ideal interfaces for highly performing optoelectronics devices could be realized by an original way of depositing Pt nanoparticles and patterning a semimetal compound based on the Pt at the junction.",

keywords = "FET, Laser irradiation, Photodetector, PtTe, Raman scattering, Tellurene",

author = "Nguyen, {Duc Anh} and Park, {Dae Young} and Juchan Lee and Duong, {Ngoc Thanh} and Chulho Park and Nguyen, {Duc Hieu} and Le, {Thi Suong} and Dongseok Suh and Heejun Yang and Jeong, {Mun Seok}",

note = "Funding Information: This research was supported by National Research Foundation of Korea (NRF) funded by Ministry of Science and ICT ( NRF-2019M3D1A1078299 and NRF-2019R1A2B5B02070657 ). H. Y. acknowledges support from the National Research Foundation of Korea (NRF) under grant no. NRF-2018M3D1A1058793 . Publisher Copyright: {\textcopyright} 2021 Elsevier Ltd",

year = "2021",

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doi = "10.1016/j.nanoen.2021.106049",

language = "English",

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T1 - Patterning of type-II Dirac semimetal PtTe2 for optimized interface of tellurene optoelectronic device

AU - Nguyen, Duc Anh

AU - Park, Dae Young

AU - Lee, Juchan

AU - Duong, Ngoc Thanh

AU - Park, Chulho

AU - Nguyen, Duc Hieu

AU - Le, Thi Suong

AU - Suh, Dongseok

AU - Yang, Heejun

AU - Jeong, Mun Seok

N1 - Funding Information: This research was supported by National Research Foundation of Korea (NRF) funded by Ministry of Science and ICT ( NRF-2019M3D1A1078299 and NRF-2019R1A2B5B02070657 ). H. Y. acknowledges support from the National Research Foundation of Korea (NRF) under grant no. NRF-2018M3D1A1058793 . Publisher Copyright: © 2021 Elsevier Ltd

PY - 2021/8

Y1 - 2021/8

N2 - The controllable transformation between the semiconductor and metal plays a key role for the electronic and optoelectronic applications of atomically thin two-dimensional (2D) layered materials. Herein, we report laser-driven synthesis of PtTe2 from Pt-deposited 2D tellurium (Te) for optimized interface of 2D Te optoelectronic device. The size and shape of the synthesized area of the PtTe2 can be designable in the laser irradiation process. The electrical properties of 2D Te change from p-type semiconducting to metallic due to the formation of semimetallic PtTe2 after laser irradiation, increasing the conductivity by factors of 500. In addition, by using PtTe2 contact, the carrier mobility and photoresponsivity of the 2D Te devices could be greatly enhanced. Our photodetector shows high responsivity and detectivity up to 5.8 × 104 A W−1 and 5.31 × 1011 Jones, respectively. Ideal interfaces for highly performing optoelectronics devices could be realized by an original way of depositing Pt nanoparticles and patterning a semimetal compound based on the Pt at the junction.

AB - The controllable transformation between the semiconductor and metal plays a key role for the electronic and optoelectronic applications of atomically thin two-dimensional (2D) layered materials. Herein, we report laser-driven synthesis of PtTe2 from Pt-deposited 2D tellurium (Te) for optimized interface of 2D Te optoelectronic device. The size and shape of the synthesized area of the PtTe2 can be designable in the laser irradiation process. The electrical properties of 2D Te change from p-type semiconducting to metallic due to the formation of semimetallic PtTe2 after laser irradiation, increasing the conductivity by factors of 500. In addition, by using PtTe2 contact, the carrier mobility and photoresponsivity of the 2D Te devices could be greatly enhanced. Our photodetector shows high responsivity and detectivity up to 5.8 × 104 A W−1 and 5.31 × 1011 Jones, respectively. Ideal interfaces for highly performing optoelectronics devices could be realized by an original way of depositing Pt nanoparticles and patterning a semimetal compound based on the Pt at the junction.

KW - FET

KW - Laser irradiation

KW - Photodetector

KW - PtTe

KW - Raman scattering

KW - Tellurene

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