Pattern-dependent charging in plasmas

Gyeong S. Hwang; Konstantinos P. Giapis

doi:10.1109/27.763065

Pattern-dependent charging in plasmas

Gyeong S. Hwang, Konstantinos P. Giapis

Department of Chemical Engineering & Materials Science

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

When patterned surfaces are exposed to plasmas, the directionality difference between ions and electrons causes differential charging of the pattern. Potential contour maps, generated by Monte Carlo simulations of charging in mixed conductor-insulator structures, illustrate where charging occurs and how it becomes more aggravated as the number of features in the pattern increases (a feature multiplicity effect).

Original language	English
Pages (from-to)	102-103
Number of pages	2
Journal	IEEE Transactions on Plasma Science
Volume	27
Issue number	1
DOIs	https://doi.org/10.1109/27.763065
State	Published - 1999

Bibliographical note

Funding Information:
Manuscript received June 19, 1998; revised November 12, 1998. This work was supported in part by NSF (ECS-9 729 968). The work of G. S. Hwang was supported by an Applied Materials Scholarship. The work of K. P. Giapis was supported by a Camille Dreyfus Teacher-Scholar Award.

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note = "Funding Information: Manuscript received June 19, 1998; revised November 12, 1998. This work was supported in part by NSF (ECS-9 729 968). The work of G. S. Hwang was supported by an Applied Materials Scholarship. The work of K. P. Giapis was supported by a Camille Dreyfus Teacher-Scholar Award.",

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AB - When patterned surfaces are exposed to plasmas, the directionality difference between ions and electrons causes differential charging of the pattern. Potential contour maps, generated by Monte Carlo simulations of charging in mixed conductor-insulator structures, illustrate where charging occurs and how it becomes more aggravated as the number of features in the pattern increases (a feature multiplicity effect).

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Pattern-dependent charging in plasmas

Abstract

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