Partially depleted SONOS FinFET for unified RAM (URAM) - Unified function for high-speed 1T DRAM and nonvolatile memory

Jin Woo Han; Seong Wan Ryu; Chung Jin Kim; Sungho Kim; Maesoon Im; Sung Jin Choi; Jin Soo Kim; Kwang Hee Kim; Gi Sung Lee; Jae Sub Oh; Myeong Ho Song; Yun Chang Park; Jeoung Woo Kim; Yang Kyu Choi

doi:10.1109/LED.2008.2000616

Partially depleted SONOS FinFET for unified RAM (URAM) - Unified function for high-speed 1T DRAM and nonvolatile memory

Jin Woo Han, Seong Wan Ryu, Chung Jin Kim, Sungho Kim, Maesoon Im, Sung Jin Choi, Jin Soo Kim, Kwang Hee Kim, Gi Sung Lee, Jae Sub Oh, Myeong Ho Song, Yun Chang Park, Jeoung Woo Kim, Yang Kyu Choi

Semiconductor Engineering

Research output: Contribution to journal › Article › peer-review

25 Scopus citations

Abstract

Unified random access memory (URAM) is demonstrated for the first time. The novel partially depleted (PD) SONOS FinFET provides unified function of a high-speed capacitorless 1T DRAM and a nonvolatile memory (NVM). The combination of an oxide/nitride/oxide (O/N/O) layer and a floating-body facilitates URAM operation in PD SONOS FinFETs. An NVM function is achieved by FN tunneling into the O/N/O stack and, a 1T-DRAM function is achieved by excessive-hole accumulation in the PD body. The fabricated PD SONOS FinFET shows retention time exceeding 10 years for NVM operation and program/erase time below 6 ns for 1T-DRAM in a single-cell transistor. These two memory functions are guaranteed without disturbance between them.

Original language	English
Pages (from-to)	781-783
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	29
Issue number	7
DOIs	https://doi.org/10.1109/LED.2008.2000616
State	Published - Jul 2008

Keywords

1T DRAM
Capacitorless DRAM
FinFET
Nonvolatile memory (NVM)
SONOS
Unified RAM (URAM)

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10.1109/LED.2008.2000616

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Han, J. W., Ryu, S. W., Kim, C. J., Kim, S., Im, M., Choi, S. J., Kim, J. S., Kim, K. H., Lee, G. S., Oh, J. S., Song, M. H., Park, Y. C., Kim, J. W., & Choi, Y. K. (2008). Partially depleted SONOS FinFET for unified RAM (URAM) - Unified function for high-speed 1T DRAM and nonvolatile memory. IEEE Electron Device Letters, 29(7), 781-783. https://doi.org/10.1109/LED.2008.2000616

@article{d51dc56755354bf1884808ec90e29733,

title = "Partially depleted SONOS FinFET for unified RAM (URAM) - Unified function for high-speed 1T DRAM and nonvolatile memory",

abstract = "Unified random access memory (URAM) is demonstrated for the first time. The novel partially depleted (PD) SONOS FinFET provides unified function of a high-speed capacitorless 1T DRAM and a nonvolatile memory (NVM). The combination of an oxide/nitride/oxide (O/N/O) layer and a floating-body facilitates URAM operation in PD SONOS FinFETs. An NVM function is achieved by FN tunneling into the O/N/O stack and, a 1T-DRAM function is achieved by excessive-hole accumulation in the PD body. The fabricated PD SONOS FinFET shows retention time exceeding 10 years for NVM operation and program/erase time below 6 ns for 1T-DRAM in a single-cell transistor. These two memory functions are guaranteed without disturbance between them.",

keywords = "1T DRAM, Capacitorless DRAM, FinFET, Nonvolatile memory (NVM), SONOS, Unified RAM (URAM)",

author = "Han, \{Jin Woo\} and Ryu, \{Seong Wan\} and Kim, \{Chung Jin\} and Sungho Kim and Maesoon Im and Choi, \{Sung Jin\} and Kim, \{Jin Soo\} and Kim, \{Kwang Hee\} and Lee, \{Gi Sung\} and Oh, \{Jae Sub\} and Song, \{Myeong Ho\} and Park, \{Yun Chang\} and Kim, \{Jeoung Woo\} and Choi, \{Yang Kyu\}",

year = "2008",

month = jul,

doi = "10.1109/LED.2008.2000616",

language = "English",

volume = "29",

pages = "781--783",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "7",

}

TY - JOUR

T1 - Partially depleted SONOS FinFET for unified RAM (URAM) - Unified function for high-speed 1T DRAM and nonvolatile memory

AU - Han, Jin Woo

AU - Ryu, Seong Wan

AU - Kim, Chung Jin

AU - Kim, Sungho

AU - Im, Maesoon

AU - Choi, Sung Jin

AU - Kim, Jin Soo

AU - Kim, Kwang Hee

AU - Lee, Gi Sung

AU - Oh, Jae Sub

AU - Song, Myeong Ho

AU - Park, Yun Chang

AU - Kim, Jeoung Woo

AU - Choi, Yang Kyu

PY - 2008/7

Y1 - 2008/7

N2 - Unified random access memory (URAM) is demonstrated for the first time. The novel partially depleted (PD) SONOS FinFET provides unified function of a high-speed capacitorless 1T DRAM and a nonvolatile memory (NVM). The combination of an oxide/nitride/oxide (O/N/O) layer and a floating-body facilitates URAM operation in PD SONOS FinFETs. An NVM function is achieved by FN tunneling into the O/N/O stack and, a 1T-DRAM function is achieved by excessive-hole accumulation in the PD body. The fabricated PD SONOS FinFET shows retention time exceeding 10 years for NVM operation and program/erase time below 6 ns for 1T-DRAM in a single-cell transistor. These two memory functions are guaranteed without disturbance between them.

AB - Unified random access memory (URAM) is demonstrated for the first time. The novel partially depleted (PD) SONOS FinFET provides unified function of a high-speed capacitorless 1T DRAM and a nonvolatile memory (NVM). The combination of an oxide/nitride/oxide (O/N/O) layer and a floating-body facilitates URAM operation in PD SONOS FinFETs. An NVM function is achieved by FN tunneling into the O/N/O stack and, a 1T-DRAM function is achieved by excessive-hole accumulation in the PD body. The fabricated PD SONOS FinFET shows retention time exceeding 10 years for NVM operation and program/erase time below 6 ns for 1T-DRAM in a single-cell transistor. These two memory functions are guaranteed without disturbance between them.

KW - 1T DRAM

KW - Capacitorless DRAM

KW - FinFET

KW - Nonvolatile memory (NVM)

KW - SONOS

KW - Unified RAM (URAM)

UR - https://www.scopus.com/pages/publications/47249136108

U2 - 10.1109/LED.2008.2000616

DO - 10.1109/LED.2008.2000616

M3 - Article

AN - SCOPUS:47249136108

SN - 0741-3106

VL - 29

SP - 781

EP - 783

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 7

ER -

Partially depleted SONOS FinFET for unified RAM (URAM) - Unified function for high-speed 1T DRAM and nonvolatile memory

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Keywords

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