Page replacement algorithms for NAND flash memory storages

Yun Seok Yoo, Hyejeong Lee, Yeonseung Ryu, Hyokyung Bahn

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

36 Scopus citations

Abstract

This paper presents new page replacement algorithms for NAND flash memory, called CFLRU/C, CFLRU/E, and DL-CFLRU/E. The algorithms aim at reducing the number of erase operations and improving the wear-leveling degree of Hash memory. In the CFLRU/C and CFLRU/E algorithms, the least recently used clean page is selected as the victim within the pre-specified window of the LRU list. If there is no clean page within the window, CFLRU/C evicts the dirty page with the lowest access frequency while CFLRU/E evicts the dirty page with the lowest block erase count. DL-CFLRU/E maintains two LRU lists called the clean page list and the dirty page list, and first evicts a page from the clean page list. If there is no clean page in the clean page list, DLCFLRU/E evicts the dirty page with the lowest block erase count within the window of the dirty page list. Experiments through simulation studies show that the proposed algorithms reduce the number of erase operations and improve the wear-leveling degree of flash memory compared to LRU and CFLRU.

Original languageEnglish
Title of host publicationComputational Science and Its Applications - ICCSA 2007 - International Conference, Proceedings
PublisherSpringer Verlag
Pages201-212
Number of pages12
EditionPART 1
ISBN (Print)9783540744689
DOIs
StatePublished - 2007
EventInternational Conference on Computational Science and its Applications, ICCSA 2007 - Kuala Lumpur, Malaysia
Duration: 26 Aug 200729 Aug 2007

Publication series

NameLecture Notes in Computer Science (including subseries Lecture Notes in Artificial Intelligence and Lecture Notes in Bioinformatics)
NumberPART 1
Volume4705 LNCS
ISSN (Print)0302-9743
ISSN (Electronic)1611-3349

Conference

ConferenceInternational Conference on Computational Science and its Applications, ICCSA 2007
Country/TerritoryMalaysia
CityKuala Lumpur
Period26/08/0729/08/07

Keywords

  • Flash memory
  • LRU
  • Page replacement
  • Virtual memory system

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