P-assisted growth of molecular wires on Si (001) -2×1

Yun Wang; Gyeong S. Hwang

doi:10.1063/1.1849412

P-assisted growth of molecular wires on Si (001) -2×1

Yun Wang, Gyeong S. Hwang

Chemical Engineering & Materials Science

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

Using first principles quantum mechanics (DFT/GGA with pseudopotentials) calculations, we propose a mechanism for the P-assisted auto-catalyzed chain reaction of alkene molecules on a monohydride Si (001) -2×1-H surface. This study shows that surface-incorporated P atoms can serve as an initiator and a terminator for the self-directed growth of one-dimensional molecular wires on Si(001). We first present reaction paths and energetics for creation of single Si dangling bonds by (P-associated) selective H2 desorption on the P-incorporated Si(001)-H surface, with comparison to associative H2 desorption on the clean Si(001)-H surface. The (Si-dangling bond mediated) growth of styrene molecular lines is then compared between the P-incorporated and clean Si(001) surfaces.

Original language	English
Article number	023108
Pages (from-to)	023108-1-023108-3
Journal	Applied Physics Letters
Volume	86
Issue number	2
DOIs	https://doi.org/10.1063/1.1849412
State	Published - 10 Jan 2005

Bibliographical note

Funding Information:
The authors acknowledge the Welch Foundation (Grant No. F-1535) for their financial support of this work. All our calculations were performed using supercomputers at the Texas Advanced Computing Center at the University of Texas at Austin.

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abstract = "Using first principles quantum mechanics (DFT/GGA with pseudopotentials) calculations, we propose a mechanism for the P-assisted auto-catalyzed chain reaction of alkene molecules on a monohydride Si (001) -2×1-H surface. This study shows that surface-incorporated P atoms can serve as an initiator and a terminator for the self-directed growth of one-dimensional molecular wires on Si(001). We first present reaction paths and energetics for creation of single Si dangling bonds by (P-associated) selective H2 desorption on the P-incorporated Si(001)-H surface, with comparison to associative H2 desorption on the clean Si(001)-H surface. The (Si-dangling bond mediated) growth of styrene molecular lines is then compared between the P-incorporated and clean Si(001) surfaces.",

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N2 - Using first principles quantum mechanics (DFT/GGA with pseudopotentials) calculations, we propose a mechanism for the P-assisted auto-catalyzed chain reaction of alkene molecules on a monohydride Si (001) -2×1-H surface. This study shows that surface-incorporated P atoms can serve as an initiator and a terminator for the self-directed growth of one-dimensional molecular wires on Si(001). We first present reaction paths and energetics for creation of single Si dangling bonds by (P-associated) selective H2 desorption on the P-incorporated Si(001)-H surface, with comparison to associative H2 desorption on the clean Si(001)-H surface. The (Si-dangling bond mediated) growth of styrene molecular lines is then compared between the P-incorporated and clean Si(001) surfaces.

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P-assisted growth of molecular wires on Si (001) -2×1

Abstract

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