Oxygen stability and leakage current properties of La-modified bismuth titanate ferroelectric thin films

Ran Hee Shin, Ji Hye Lee, Gracia Kim, William Jo, O. Jong Kwon, Chan Park, Dae Hyun Kim, Hyun Jin Lee, Jeongsoo Kang

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

The effects of oxygen annealing on the structural properties and leakage current behaviors of sol-gel-derived Bi3 25La0.75Ti 3O12-y ferroelectric thin films have been studied. The thin films were pyrolyzed in different atmospheric conditions including a fully oxygenized ambient of 1 bar and an evacuated ambient of less than 10 mbar. X-ray diffraction patterns of the deoxygenated films showed measurable shifts to a higher angle, indicating that each deoxygenated film had a smaller lattice constant than the oxygenated one. Scanning probe analysis showed well-developed grains and inhomogeneous and asymmetric bound charges in both samples. The leakage current behavior of the films was measured as a function of voltage and temperature and was explained on the basis of the Schottky-Simmons thermionic emission model. X-ray photoemission spectra showed that oxygen stability in Bi2O2 layers plays an important role in determining the level of leakage current in the films.

Original languageEnglish
Article number111407
JournalJapanese Journal of Applied Physics
Volume48
Issue number11
DOIs
StatePublished - 2009

Fingerprint

Dive into the research topics of 'Oxygen stability and leakage current properties of La-modified bismuth titanate ferroelectric thin films'. Together they form a unique fingerprint.

Cite this