Oxygen-doped zirconium nitride based transparent resistive random access memory devices fabricated by radio frequency sputtering method

In this work, we present a feasibility of bipolar resistive switching (RS) characteristics for Oxygen-doped zirconium nitride (O-doped ZrN_x) films, produced by sputtering method, which shows a high optical transmittance of approximately 78% in the visible region as well as near ultra-violet region. In addition, in a RS test, the device has a large current ratio of 5 × 10³ in positive bias region and 5 × 10⁵ in negative bias region. Then, to evaluate an ability of data storage for the proposed memory devices, we measured a retention time for 10⁴ s at room temperature (RT) and 85 °C as well. As a result, the set and reset states were stably maintained with a current ratio of ∼10² at 85 °C to ∼10³ at RT. This result means that the transparent memory by controlling the working pressure during sputtering process to deposit the ZrN_x films could be a milestone for future see-through electronic devices.