O₂-Enhanced surface treatment of Ge epitaxially grown on Si for heterogeneous Ge technology

Engineering

• Rapid Thermal Annealing 100%
• Si Substrate 50%
• Chemical Vapor Deposition 50%
• Vapor Deposition 50%
• Material Quality 50%
• Annealing Process 50%
• Photonic Devices 50%
• Reduced Pressure 50%
• Room Temperature 50%

Material Science

• Photoluminescence 100%
• Annealing 50%
• Chemical Vapor Deposition 50%
• Optical Device 50%

Physics

• Photoluminescence 100%
• Optical Device 50%
• Room Temperature 50%
• Vapor Deposition 50%