TY - GEN
T1 - O2-Enhanced surface treatment of Ge epitaxially grown on Si for heterogeneous Ge technology
AU - Chen, Xiaochi
AU - Huo, Yijie
AU - Harris, James S.
AU - Cho, Seongjae
AU - Park, Byung Gook
PY - 2014
Y1 - 2014
N2 - In this work, in order to investigate the effects of annealing gases on the quality of Ge epitaxially grown on Si substrate, ex-situ rapid thermal annealing (RTA) processes with different gases have been performed. The Ge-on-Si samples were prepared by different growth techniques using reduced-pressure chemical vapor deposition (RPCVD), and then, samples annealed in the N 2, forming gas (FG), and O2 were compared with an unannealed one to confirm the improvements in Ge quality. To evaluate the material quality, photoluminescence (PL) measurements have been carried out for the samples at room temperature. Among the prepared samples, the O 2-annealed sample showed the highest PL signals regardless of growth techniques, which supports that an ex-situ RTA in the O2 ambient would be an effective technique for surface treatment of Ge in the fabrication processes of Ge-based electronic and photonic devices.
AB - In this work, in order to investigate the effects of annealing gases on the quality of Ge epitaxially grown on Si substrate, ex-situ rapid thermal annealing (RTA) processes with different gases have been performed. The Ge-on-Si samples were prepared by different growth techniques using reduced-pressure chemical vapor deposition (RPCVD), and then, samples annealed in the N 2, forming gas (FG), and O2 were compared with an unannealed one to confirm the improvements in Ge quality. To evaluate the material quality, photoluminescence (PL) measurements have been carried out for the samples at room temperature. Among the prepared samples, the O 2-annealed sample showed the highest PL signals regardless of growth techniques, which supports that an ex-situ RTA in the O2 ambient would be an effective technique for surface treatment of Ge in the fabrication processes of Ge-based electronic and photonic devices.
KW - epitaxial growth
KW - germanium
KW - germanium-on-silicon
KW - photoluminescence
KW - rapid thermal annealing
KW - reduced-pressure chemical vapor deposition
KW - surface treatment
UR - http://www.scopus.com/inward/record.url?scp=84907397833&partnerID=8YFLogxK
U2 - 10.1109/ISCE.2014.6884474
DO - 10.1109/ISCE.2014.6884474
M3 - Conference contribution
AN - SCOPUS:84907397833
SN - 9781479945924
T3 - Proceedings of the International Symposium on Consumer Electronics, ISCE
BT - ISCE 2014 - 18th IEEE International Symposium on Consumer Electronics
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 18th IEEE International Symposium on Consumer Electronics, ISCE 2014
Y2 - 22 June 2014 through 25 June 2014
ER -