Ordering phenomena and formation of nanostructures in Inx Ga1-x N layers coherently grown on GaN(0001)

Sangheon Lee; Christoph Freysoldt; Jörg Neugebauer

doi:10.1103/PhysRevB.90.245301

Ordering phenomena and formation of nanostructures in Inx Ga1-x N layers coherently grown on GaN(0001)

Sangheon Lee, Christoph Freysoldt, Jörg Neugebauer

Department of Chemical Engineering & Materials Science

Research output: Contribution to journal › Article › peer-review

24 Scopus citations

Abstract

We study the impact that local strain effects have on the spatial distribution of In in coherent InxGa1-xN grown epitaxially on GaN(0001) using an effective crystal growth modeling technique that combines a semi-grand-canonical Monte Carlo simulation with an ab initio parametrized empirical force field.

Original language	English
Article number	245301
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	90
Issue number	24
DOIs	https://doi.org/10.1103/PhysRevB.90.245301
State	Published - 8 Dec 2014

Bibliographical note

Publisher Copyright:
©c direction. The ordering phenomena are identified as a key factor that determines lateral phase separation in InxGa1-xN epitaxial layers at the nanometer scale. Consequences of this nanophase separation for the enhanced radiative emission through carrier localization in InxGa1-xN of x<1/3 are discussed. © 2014 American Physical Society.

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title = "Ordering phenomena and formation of nanostructures in Inx Ga1-x N layers coherently grown on GaN(0001)",

abstract = "We study the impact that local strain effects have on the spatial distribution of In in coherent InxGa1-xN grown epitaxially on GaN(0001) using an effective crystal growth modeling technique that combines a semi-grand-canonical Monte Carlo simulation with an ab initio parametrized empirical force field.",

author = "Sangheon Lee and Christoph Freysoldt and J{\"o}rg Neugebauer",

note = "Publisher Copyright: {\textcopyright}c direction. The ordering phenomena are identified as a key factor that determines lateral phase separation in InxGa1-xN epitaxial layers at the nanometer scale. Consequences of this nanophase separation for the enhanced radiative emission through carrier localization in InxGa1-xN of x<1/3 are discussed. {\textcopyright} 2014 American Physical Society.",

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AU - Freysoldt, Christoph

AU - Neugebauer, Jörg

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N2 - We study the impact that local strain effects have on the spatial distribution of In in coherent InxGa1-xN grown epitaxially on GaN(0001) using an effective crystal growth modeling technique that combines a semi-grand-canonical Monte Carlo simulation with an ab initio parametrized empirical force field.

AB - We study the impact that local strain effects have on the spatial distribution of In in coherent InxGa1-xN grown epitaxially on GaN(0001) using an effective crystal growth modeling technique that combines a semi-grand-canonical Monte Carlo simulation with an ab initio parametrized empirical force field.

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JO - Physical Review B - Condensed Matter and Materials Physics

JF - Physical Review B - Condensed Matter and Materials Physics

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Ordering phenomena and formation of nanostructures in Inx Ga1-x N layers coherently grown on GaN(0001)

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