TY - JOUR
T1 - Ordering phenomena and formation of nanostructures in Inx Ga1-x N layers coherently grown on GaN(0001)
AU - Lee, Sangheon
AU - Freysoldt, Christoph
AU - Neugebauer, Jörg
N1 - Publisher Copyright:
©c direction. The ordering phenomena are identified as a key factor that determines lateral phase separation in InxGa1-xN epitaxial layers at the nanometer scale. Consequences of this nanophase separation for the enhanced radiative emission through carrier localization in InxGa1-xN of x<1/3 are discussed. © 2014 American Physical Society.
PY - 2014/12/8
Y1 - 2014/12/8
N2 - We study the impact that local strain effects have on the spatial distribution of In in coherent InxGa1-xN grown epitaxially on GaN(0001) using an effective crystal growth modeling technique that combines a semi-grand-canonical Monte Carlo simulation with an ab initio parametrized empirical force field. Our calculations show that InxGa1-xN epitaxial layers exhibit a strong tendency towards ordering, as highlighted by the formation of a vertical stack of the 3×3 patterned layers along the
AB - We study the impact that local strain effects have on the spatial distribution of In in coherent InxGa1-xN grown epitaxially on GaN(0001) using an effective crystal growth modeling technique that combines a semi-grand-canonical Monte Carlo simulation with an ab initio parametrized empirical force field. Our calculations show that InxGa1-xN epitaxial layers exhibit a strong tendency towards ordering, as highlighted by the formation of a vertical stack of the 3×3 patterned layers along the
UR - http://www.scopus.com/inward/record.url?scp=84916240000&partnerID=8YFLogxK
U2 - 10.1103/PhysRevB.90.245301
DO - 10.1103/PhysRevB.90.245301
M3 - Article
AN - SCOPUS:84916240000
SN - 1098-0121
VL - 90
JO - Physical Review B - Condensed Matter and Materials Physics
JF - Physical Review B - Condensed Matter and Materials Physics
IS - 24
M1 - 245301
ER -