Ordering phenomena and formation of nanostructures in Inx Ga1-x N layers coherently grown on GaN(0001)

Sangheon Lee, Christoph Freysoldt, Jörg Neugebauer

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Abstract

We study the impact that local strain effects have on the spatial distribution of In in coherent InxGa1-xN grown epitaxially on GaN(0001) using an effective crystal growth modeling technique that combines a semi-grand-canonical Monte Carlo simulation with an ab initio parametrized empirical force field. Our calculations show that InxGa1-xN epitaxial layers exhibit a strong tendency towards ordering, as highlighted by the formation of a vertical stack of the 3×3 patterned layers along the

Original languageEnglish
Article number245301
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume90
Issue number24
DOIs
StatePublished - 8 Dec 2014

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