We study the impact that local strain effects have on the spatial distribution of In in coherent InxGa1-xN grown epitaxially on GaN(0001) using an effective crystal growth modeling technique that combines a semi-grand-canonical Monte Carlo simulation with an ab initio parametrized empirical force field.
|Physical Review B - Condensed Matter and Materials Physics
|Published - 8 Dec 2014
Bibliographical notePublisher Copyright:
©c direction. The ordering phenomena are identified as a key factor that determines lateral phase separation in InxGa1-xN epitaxial layers at the nanometer scale. Consequences of this nanophase separation for the enhanced radiative emission through carrier localization in InxGa1-xN of x<1/3 are discussed. © 2014 American Physical Society.