Ordering phenomena and formation of nanostructures in Inx Ga1-x N layers coherently grown on GaN(0001)

Sangheon Lee, Christoph Freysoldt, Jörg Neugebauer

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Abstract

We study the impact that local strain effects have on the spatial distribution of In in coherent InxGa1-xN grown epitaxially on GaN(0001) using an effective crystal growth modeling technique that combines a semi-grand-canonical Monte Carlo simulation with an ab initio parametrized empirical force field.

Original languageEnglish
Article number245301
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume90
Issue number24
DOIs
StatePublished - 8 Dec 2014

Bibliographical note

Publisher Copyright:
©c direction. The ordering phenomena are identified as a key factor that determines lateral phase separation in InxGa1-xN epitaxial layers at the nanometer scale. Consequences of this nanophase separation for the enhanced radiative emission through carrier localization in InxGa1-xN of x<1/3 are discussed. © 2014 American Physical Society.

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