Ordered arrays of 〈100〉-oriented silicon nanorods by CMOS-compatible block copolymer lithography

Danilo Zschech; Dong Ha Kim; Alexey P. Milenin; Roland Scholz; Reinald Hillebrand; Craig J. Hawker; Thomas P. Russell; Martin Steinhart; Ulrich Gösele

doi:10.1021/nl070275d

Ordered arrays of 〈100〉-oriented silicon nanorods by CMOS-compatible block copolymer lithography

Danilo Zschech, Dong Ha Kim, Alexey P. Milenin, Roland Scholz, Reinald Hillebrand, Craig J. Hawker, Thomas P. Russell, Martin Steinhart, Ulrich Gösele

Chemistry & Nanoscience

Research output: Contribution to journal › Article › peer-review

117 Scopus citations

Abstract

Dense, ordered arrays of 〈100〉-oriented Si nanorods with uniform aspect ratios up to 5:1 and a uniform diameter of 15 nm were fabricated by block copolymer lithography based on the inverse of the traditional cylindrical hole strategy and reactive ion etching. The reported approach combines control over diameter, orientation, and position of the nanorods and compatibility with complementary metal oxide semiconductor (CMOS) technology because no nonvolatile metals generating deep levels in silicon, such as gold or iron, are involved. The Si nanorod arrays exhibit the same degree of order as the block copolymer templates.

Original language	English
Pages (from-to)	1516-1520
Number of pages	5
Journal	Nano Letters
Volume	7
Issue number	6
DOIs	https://doi.org/10.1021/nl070275d
State	Published - Jun 2007

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title = "Ordered arrays of 〈100〉-oriented silicon nanorods by CMOS-compatible block copolymer lithography",

abstract = "Dense, ordered arrays of 〈100〉-oriented Si nanorods with uniform aspect ratios up to 5:1 and a uniform diameter of 15 nm were fabricated by block copolymer lithography based on the inverse of the traditional cylindrical hole strategy and reactive ion etching. The reported approach combines control over diameter, orientation, and position of the nanorods and compatibility with complementary metal oxide semiconductor (CMOS) technology because no nonvolatile metals generating deep levels in silicon, such as gold or iron, are involved. The Si nanorod arrays exhibit the same degree of order as the block copolymer templates.",

author = "Danilo Zschech and Kim, {Dong Ha} and Milenin, {Alexey P.} and Roland Scholz and Reinald Hillebrand and Hawker, {Craig J.} and Russell, {Thomas P.} and Martin Steinhart and Ulrich G{\"o}sele",

year = "2007",

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doi = "10.1021/nl070275d",

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T1 - Ordered arrays of 〈100〉-oriented silicon nanorods by CMOS-compatible block copolymer lithography

AU - Zschech, Danilo

AU - Kim, Dong Ha

AU - Milenin, Alexey P.

AU - Scholz, Roland

AU - Hillebrand, Reinald

AU - Hawker, Craig J.

AU - Russell, Thomas P.

AU - Steinhart, Martin

AU - Gösele, Ulrich

PY - 2007/6

Y1 - 2007/6

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AB - Dense, ordered arrays of 〈100〉-oriented Si nanorods with uniform aspect ratios up to 5:1 and a uniform diameter of 15 nm were fabricated by block copolymer lithography based on the inverse of the traditional cylindrical hole strategy and reactive ion etching. The reported approach combines control over diameter, orientation, and position of the nanorods and compatibility with complementary metal oxide semiconductor (CMOS) technology because no nonvolatile metals generating deep levels in silicon, such as gold or iron, are involved. The Si nanorod arrays exhibit the same degree of order as the block copolymer templates.

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JO - Nano Letters

JF - Nano Letters

IS - 6

ER -

Ordered arrays of 〈100〉-oriented silicon nanorods by CMOS-compatible block copolymer lithography

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