Optimization of uniaxial stress for high electron mobility on biaxially-strained n-MOSFETs

Wookyung Sun, Hyungsoon Shin

Research output: Contribution to journalArticlepeer-review

9 Scopus citations


The uniaxial stress effect for high electron mobility on biaxially-strained n-MOSFET is investigated by using a one-dimensional self-consistent Schrödinger-Poisson solver. The electron mobility model includes Coulomb, intravalley phonon, intervalley phonon, and surface roughness scattering. We have found that the uniaxial stress effect on biaxially-strained n-MOSFET is significantly different from the uniaxial stress effect on unstrained Si n-MOSFET. It is well known that longitudinal and transverse tensile uniaxial stresses are advantageous for strain-induced high electron mobility. However, we found that the uniaxial strain condition for electron mobility enhancement is changed when it is applied to the biaxially-strained n-MOSFET. To optimize the combined effect of uniaxial and biaxial strain, the longitudinal tensile and transverse compressive uniaxial stresses are advantageous and vertical stress is not helpful for biaxially-strained n-MOSFET.

Original languageEnglish
Pages (from-to)23-27
Number of pages5
JournalSolid-State Electronics
StatePublished - Apr 2014

Bibliographical note

Funding Information:
This research was supported by the Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (No. 2010-0007016 ).


  • Biaxial strain
  • Electron mobility
  • Strained Si
  • Stress
  • Uniaxial strain


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