The uniaxial stress effect for high electron mobility on biaxially-strained n-MOSFET is investigated by using a one-dimensional self-consistent Schrödinger-Poisson solver. The electron mobility model includes Coulomb, intravalley phonon, intervalley phonon, and surface roughness scattering. We have found that the uniaxial stress effect on biaxially-strained n-MOSFET is significantly different from the uniaxial stress effect on unstrained Si n-MOSFET. It is well known that longitudinal and transverse tensile uniaxial stresses are advantageous for strain-induced high electron mobility. However, we found that the uniaxial strain condition for electron mobility enhancement is changed when it is applied to the biaxially-strained n-MOSFET. To optimize the combined effect of uniaxial and biaxial strain, the longitudinal tensile and transverse compressive uniaxial stresses are advantageous and vertical stress is not helpful for biaxially-strained n-MOSFET.
Bibliographical noteFunding Information:
This research was supported by the Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (No. 2010-0007016 ).
- Biaxial strain
- Electron mobility
- Strained Si
- Uniaxial strain