Abstract
A feedback field-effect transistor (FBFET) is a novel device that uses a positive feedback mechanism. FBFET has a high on-/off ratio and is expected to realize ideal switching characteristics through steep changes from off-state to on-state. In this paper, we propose and optimize FBFET devices with asymmetric source/drain doping concentrations. Additionally, we discuss the changes in electrical characteristics across various channel length and channel thickness conditions and compare them with those of FBFET with a symmetric source/drain. This shows that FBFET with an asymmetric source/drain has a higher on-/off ratio than FBFET with a symmetric source/drain.
| Original language | English |
|---|---|
| Article number | 508 |
| Journal | Micromachines |
| Volume | 13 |
| Issue number | 4 |
| DOIs | |
| State | Published - Apr 2022 |
Bibliographical note
Publisher Copyright:© 2022 by the authors. Licensee MDPI, Basel, Switzerland.
Keywords
- TCAD
- device optimization
- feedback field-effect transistor (FBFET)
- on–off current ratio
- subthreshold swing
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