Optimization of Feedback FET with Asymmetric Source Drain Doping Profile

Inyoung Lee, Hyojin Park, Quan The Nguyen, Garam Kim, Seongjae Cho, Ilhwan Cho

Research output: Contribution to journalArticlepeer-review

2 Scopus citations


A feedback field-effect transistor (FBFET) is a novel device that uses a positive feedback mechanism. FBFET has a high on-/off ratio and is expected to realize ideal switching characteristics through steep changes from off-state to on-state. In this paper, we propose and optimize FBFET devices with asymmetric source/drain doping concentrations. Additionally, we discuss the changes in electrical characteristics across various channel length and channel thickness conditions and compare them with those of FBFET with a symmetric source/drain. This shows that FBFET with an asymmetric source/drain has a higher on-/off ratio than FBFET with a symmetric source/drain.

Original languageEnglish
Article number508
Issue number4
StatePublished - Apr 2022


  • device optimization
  • feedback field-effect transistor (FBFET)
  • on–off current ratio
  • subthreshold swing
  • TCAD


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