@article{4c7466f422ff483fa2657be77ce89756,
title = "Optimization of Feedback FET with Asymmetric Source Drain Doping Profile",
abstract = "A feedback field-effect transistor (FBFET) is a novel device that uses a positive feedback mechanism. FBFET has a high on-/off ratio and is expected to realize ideal switching characteristics through steep changes from off-state to on-state. In this paper, we propose and optimize FBFET devices with asymmetric source/drain doping concentrations. Additionally, we discuss the changes in electrical characteristics across various channel length and channel thickness conditions and compare them with those of FBFET with a symmetric source/drain. This shows that FBFET with an asymmetric source/drain has a higher on-/off ratio than FBFET with a symmetric source/drain.",
keywords = "device optimization, feedback field-effect transistor (FBFET), on–off current ratio, subthreshold swing, TCAD",
author = "Inyoung Lee and Hyojin Park and Nguyen, {Quan The} and Garam Kim and Seongjae Cho and Ilhwan Cho",
note = "Funding Information: Funding: This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korean government (MSIT) (No. 2021R1F1A1056255) and was also supported by the Ministry of Trade, Industry, and Economy of Korea (MOTIE) with the Korean Semiconductor Research Consortium (KSRC) through the program for the development of future semiconductor devices (Grant No. 10080513). Funding Information: Acknowledgments: The EDA tool was supported by the IC Design Education Center (IDEC), Korea. Publisher Copyright: {\textcopyright} 2022 by the authors. Licensee MDPI, Basel, Switzerland.",
year = "2022",
month = apr,
doi = "10.3390/mi13040508",
language = "English",
volume = "13",
journal = "Micromachines",
issn = "2072-666X",
publisher = "Multidisciplinary Digital Publishing Institute (MDPI)",
number = "4",
}