Optimization of Feedback FET with Asymmetric Source Drain Doping Profile

Inyoung Lee; Hyojin Park; Quan The Nguyen; Garam Kim; Seongjae Cho; Ilhwan Cho

doi:10.3390/mi13040508

Optimization of Feedback FET with Asymmetric Source Drain Doping Profile

Inyoung Lee, Hyojin Park, Quan The Nguyen, Garam Kim, Seongjae Cho, Ilhwan Cho

Electronic and Electrical Engineering

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

A feedback field-effect transistor (FBFET) is a novel device that uses a positive feedback mechanism. FBFET has a high on-/off ratio and is expected to realize ideal switching characteristics through steep changes from off-state to on-state. In this paper, we propose and optimize FBFET devices with asymmetric source/drain doping concentrations. Additionally, we discuss the changes in electrical characteristics across various channel length and channel thickness conditions and compare them with those of FBFET with a symmetric source/drain. This shows that FBFET with an asymmetric source/drain has a higher on-/off ratio than FBFET with a symmetric source/drain.

Original language	English
Article number	508
Journal	Micromachines
Volume	13
Issue number	4
DOIs	https://doi.org/10.3390/mi13040508
State	Published - Apr 2022

Bibliographical note

Publisher Copyright:
© 2022 by the authors. Licensee MDPI, Basel, Switzerland.

Keywords

TCAD
device optimization
feedback field-effect transistor (FBFET)
on–off current ratio
subthreshold swing

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10.3390/mi13040508

Cite this

@article{4c7466f422ff483fa2657be77ce89756,

title = "Optimization of Feedback FET with Asymmetric Source Drain Doping Profile",

abstract = "A feedback field-effect transistor (FBFET) is a novel device that uses a positive feedback mechanism. FBFET has a high on-/off ratio and is expected to realize ideal switching characteristics through steep changes from off-state to on-state. In this paper, we propose and optimize FBFET devices with asymmetric source/drain doping concentrations. Additionally, we discuss the changes in electrical characteristics across various channel length and channel thickness conditions and compare them with those of FBFET with a symmetric source/drain. This shows that FBFET with an asymmetric source/drain has a higher on-/off ratio than FBFET with a symmetric source/drain.",

keywords = "TCAD, device optimization, feedback field-effect transistor (FBFET), on–off current ratio, subthreshold swing",

author = "Inyoung Lee and Hyojin Park and Nguyen, {Quan The} and Garam Kim and Seongjae Cho and Ilhwan Cho",

note = "Publisher Copyright: {\textcopyright} 2022 by the authors. Licensee MDPI, Basel, Switzerland.",

year = "2022",

month = apr,

doi = "10.3390/mi13040508",

language = "English",

volume = "13",

journal = "Micromachines",

issn = "2072-666X",

publisher = "Multidisciplinary Digital Publishing Institute (MDPI)",

number = "4",

}

TY - JOUR

T1 - Optimization of Feedback FET with Asymmetric Source Drain Doping Profile

AU - Lee, Inyoung

AU - Park, Hyojin

AU - Nguyen, Quan The

AU - Kim, Garam

AU - Cho, Seongjae

AU - Cho, Ilhwan

PY - 2022/4

Y1 - 2022/4

N2 - A feedback field-effect transistor (FBFET) is a novel device that uses a positive feedback mechanism. FBFET has a high on-/off ratio and is expected to realize ideal switching characteristics through steep changes from off-state to on-state. In this paper, we propose and optimize FBFET devices with asymmetric source/drain doping concentrations. Additionally, we discuss the changes in electrical characteristics across various channel length and channel thickness conditions and compare them with those of FBFET with a symmetric source/drain. This shows that FBFET with an asymmetric source/drain has a higher on-/off ratio than FBFET with a symmetric source/drain.

AB - A feedback field-effect transistor (FBFET) is a novel device that uses a positive feedback mechanism. FBFET has a high on-/off ratio and is expected to realize ideal switching characteristics through steep changes from off-state to on-state. In this paper, we propose and optimize FBFET devices with asymmetric source/drain doping concentrations. Additionally, we discuss the changes in electrical characteristics across various channel length and channel thickness conditions and compare them with those of FBFET with a symmetric source/drain. This shows that FBFET with an asymmetric source/drain has a higher on-/off ratio than FBFET with a symmetric source/drain.

KW - TCAD

KW - device optimization

KW - feedback field-effect transistor (FBFET)

KW - on–off current ratio

KW - subthreshold swing

UR - http://www.scopus.com/inward/record.url?scp=85128407985&partnerID=8YFLogxK

U2 - 10.3390/mi13040508

DO - 10.3390/mi13040508

M3 - Article

AN - SCOPUS:85128407985

SN - 2072-666X

VL - 13

JO - Micromachines

JF - Micromachines

IS - 4

M1 - 508

ER -

Optimization of Feedback FET with Asymmetric Source Drain Doping Profile

Abstract

Bibliographical note

Keywords

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