Optimization and modeling of npn-type selector for resistive RRAM in cross-point array structure

Min Hwi Kim, Sunghun Jung, Sungjun Kim, Seongjae Cho, Jong Ho Lee, Hyungcheol Shin, Byung Gook Park

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review


In this paper, we investigate the characteristics of npn device as a candidate for RRAM selector. npn selector shows high current density and selectivity which are key metrics for the bidirectional select device. We confirm that length and doping concentration of base and emitter region can be varied to optimize the characteristic of the selector. In addition, we observe AC characteristic with 10 ns pulse width and interval. We confirm that I-V curve is well fitted with a combination of exponential and quadratic terms.

Original languageEnglish
Title of host publication2014 Silicon Nanoelectronics Workshop, SNW 2014
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781479956777
StatePublished - 4 Dec 2015
EventSilicon Nanoelectronics Workshop, SNW 2014 - Honolulu, United States
Duration: 8 Jun 20149 Jun 2014

Publication series

Name2014 Silicon Nanoelectronics Workshop, SNW 2014


ConferenceSilicon Nanoelectronics Workshop, SNW 2014
Country/TerritoryUnited States

Bibliographical note

Publisher Copyright:
© 2014 IEEE.


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