Optically assisted charge pumping on floating-body FETs

Sungho Kim, Sung Jin Choi, Yang Kyu Choi

Research output: Contribution to journalArticlepeer-review

5 Scopus citations

Abstract

An optical charge-pumping (CP) method is proposed to extract the interface trap density in floating-body (FB) field-effect transistors (FETs). Optically generated majority carriers are removed from the FB by applying a burst of charge-pumping pulses to the gate. The change of the drain current after each CP pulse is used to determine the interface trap density. The advantage of this method lies in the possibility to characterize FB FETs without the unnecessary generation of interface traps by measurement bias. In addition, it can be applied to various types of FB devices directly without structural modification.

Original languageEnglish
Article number5594987
Pages (from-to)1365-1367
Number of pages3
JournalIEEE Electron Device Letters
Volume31
Issue number12
DOIs
StatePublished - Dec 2010

Keywords

  • Charge pumping (CP)
  • floating-body (FB)
  • interface trap
  • silicon-on-insulator (SOI) metaloxidesemiconductor field-effect transistor (MOSFET)

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