Optical recombination of ZnO nanowires grown on sapphire and Si substrates

Q. X. Zhao; M. Willander; R. E. Morjan; Hu Q-H. Hu; E. E.B. Campbell

doi:10.1063/1.1591069

Optical recombination of ZnO nanowires grown on sapphire and Si substrates

Q. X. Zhao
, M. Willander
, R. E. Morjan
, Hu Q-H. Hu
, E. E.B. Campbell

Department of Physics

Research output: Contribution to journal › Article › peer-review

190 Scopus citations

Abstract

The optical recombination of ZnO nanowires grown on sapphire and Si substrates was studied. A strong near-band-gap ultraviolet (UV) emission was observed at room temperature. Results showed that the room-temperature UV emission contains two different transitions, one is related to the ZnO free exciton and the other is related to the free-to-bound transition.

Original language	English
Pages (from-to)	165-167
Number of pages	3
Journal	Applied Physics Letters
Volume	83
Issue number	1
DOIs	https://doi.org/10.1063/1.1591069
State	Published - 7 Jul 2003

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title = "Optical recombination of ZnO nanowires grown on sapphire and Si substrates",

abstract = "The optical recombination of ZnO nanowires grown on sapphire and Si substrates was studied. A strong near-band-gap ultraviolet (UV) emission was observed at room temperature. Results showed that the room-temperature UV emission contains two different transitions, one is related to the ZnO free exciton and the other is related to the free-to-bound transition.",

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AU - Campbell, E. E.B.

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AB - The optical recombination of ZnO nanowires grown on sapphire and Si substrates was studied. A strong near-band-gap ultraviolet (UV) emission was observed at room temperature. Results showed that the room-temperature UV emission contains two different transitions, one is related to the ZnO free exciton and the other is related to the free-to-bound transition.

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JO - Applied Physics Letters

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Optical recombination of ZnO nanowires grown on sapphire and Si substrates

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