TY - GEN
T1 - Optical charge-pumping
T2 - 2011 Symposium on VLSI Technology, VLSIT 2011
AU - Kim, Sungho
AU - Choi, Sung Jin
AU - Moon, Dong Il
AU - Choi, Yang Kyu
PY - 2011
Y1 - 2011
N2 - A universal trap characterization technique for nanoscale floating body devices is demonstrated. It overcomes the limits of conventional charge pumping. Exploiting optically generated carriers, the interface trap density, the energy distribution of interface traps, and the bulk region trap density are extracted directly without additional fabrication techniques or the use of extra test patterns. The proposed technique can provide a trap analysis tool for a study of device reliability regardless of the device structure, material, or dimension.
AB - A universal trap characterization technique for nanoscale floating body devices is demonstrated. It overcomes the limits of conventional charge pumping. Exploiting optically generated carriers, the interface trap density, the energy distribution of interface traps, and the bulk region trap density are extracted directly without additional fabrication techniques or the use of extra test patterns. The proposed technique can provide a trap analysis tool for a study of device reliability regardless of the device structure, material, or dimension.
UR - http://www.scopus.com/inward/record.url?scp=80052663046&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:80052663046
SN - 9784863481640
T3 - Digest of Technical Papers - Symposium on VLSI Technology
SP - 190
EP - 191
BT - 2011 Symposium on VLSI Technology, VLSIT 2011 - Digest of Technical Papers
Y2 - 14 June 2011 through 16 June 2011
ER -