Optical and electrical properties of Cu-based all oxide semi-transparent photodetector

Hong Sik Kim, Malkeshkumar Patel, Pankaj Yadav, Joondong Kim, Ahrum Sohn, Dong Wook Kim

Research output: Contribution to journalArticlepeer-review

15 Scopus citations

Abstract

Zero-bias operating Cu oxide-based photodetector was achieved by using large-scale available sputtering method. Cu oxide (Cu2O or CuO) was used as p-type transparent layer to form a heterojunction by contacting n-type ZnO layer. All metal-oxide materials were employed to realize transparent device at room temperature and showed a high transparency (>75% at 600 nm) with excellent photoresponses. The structural, morphological, optical, and electrical properties of Cu oxides of CuO and Cu2O are evaluated in depth by UV-visible spectrometer, X-ray diffraction, scanning electron microscopy, atomic force microscopy, Kelvin probe force microscopy, and Hall measurements. We may suggest a route of high-functional Cu oxide-based photoelectric devices for the applications in flexible and transparent electronics.

Original languageEnglish
Article number101902
JournalApplied Physics Letters
Volume109
Issue number10
DOIs
StatePublished - 5 Sep 2016

Fingerprint

Dive into the research topics of 'Optical and electrical properties of Cu-based all oxide semi-transparent photodetector'. Together they form a unique fingerprint.

Cite this