Optical and electrical properties of Cu-based all oxide semi-transparent photodetector

Hong Sik Kim; Malkeshkumar Patel; Pankaj Yadav; Joondong Kim; Ahrum Sohn; Dong Wook Kim

doi:10.1063/1.4961692

Optical and electrical properties of Cu-based all oxide semi-transparent photodetector

Hong Sik Kim, Malkeshkumar Patel, Pankaj Yadav, Joondong Kim, Ahrum Sohn, Dong Wook Kim

Department of Physics

Research output: Contribution to journal › Article › peer-review

19 Scopus citations

Abstract

Zero-bias operating Cu oxide-based photodetector was achieved by using large-scale available sputtering method. Cu oxide (Cu₂O or CuO) was used as p-type transparent layer to form a heterojunction by contacting n-type ZnO layer. All metal-oxide materials were employed to realize transparent device at room temperature and showed a high transparency (>75% at 600 nm) with excellent photoresponses. The structural, morphological, optical, and electrical properties of Cu oxides of CuO and Cu₂O are evaluated in depth by UV-visible spectrometer, X-ray diffraction, scanning electron microscopy, atomic force microscopy, Kelvin probe force microscopy, and Hall measurements. We may suggest a route of high-functional Cu oxide-based photoelectric devices for the applications in flexible and transparent electronics.

Original language	English
Article number	101902
Journal	Applied Physics Letters
Volume	109
Issue number	10
DOIs	https://doi.org/10.1063/1.4961692
State	Published - 5 Sep 2016

Bibliographical note

Funding Information:
The authors acknowledge the financial support of the Korea Institute of Energy Technology Evaluation and Planning by the Ministry of Knowledge Economy (KETEP-20133030011000), Basic Science Research Program through the National Research Foundation (NRF) of Korea by the Ministry of Education (NRF-2015R1D1A1A01059165), Korea Research Fellowship Program through the NRF by the Ministry of Science, ICT and Future Planning (NRF-2015H1D3A1066311) and post-doctoral research program through the Incheon National University.

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© 2016 Author(s).

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title = "Optical and electrical properties of Cu-based all oxide semi-transparent photodetector",

abstract = "Zero-bias operating Cu oxide-based photodetector was achieved by using large-scale available sputtering method. Cu oxide (Cu2O or CuO) was used as p-type transparent layer to form a heterojunction by contacting n-type ZnO layer. All metal-oxide materials were employed to realize transparent device at room temperature and showed a high transparency (>75% at 600 nm) with excellent photoresponses. The structural, morphological, optical, and electrical properties of Cu oxides of CuO and Cu2O are evaluated in depth by UV-visible spectrometer, X-ray diffraction, scanning electron microscopy, atomic force microscopy, Kelvin probe force microscopy, and Hall measurements. We may suggest a route of high-functional Cu oxide-based photoelectric devices for the applications in flexible and transparent electronics.",

author = "Kim, {Hong Sik} and Malkeshkumar Patel and Pankaj Yadav and Joondong Kim and Ahrum Sohn and Kim, {Dong Wook}",

note = "Funding Information: The authors acknowledge the financial support of the Korea Institute of Energy Technology Evaluation and Planning by the Ministry of Knowledge Economy (KETEP-20133030011000), Basic Science Research Program through the National Research Foundation (NRF) of Korea by the Ministry of Education (NRF-2015R1D1A1A01059165), Korea Research Fellowship Program through the NRF by the Ministry of Science, ICT and Future Planning (NRF-2015H1D3A1066311) and post-doctoral research program through the Incheon National University. Publisher Copyright: {\textcopyright} 2016 Author(s).",

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AU - Kim, Hong Sik

AU - Patel, Malkeshkumar

AU - Yadav, Pankaj

AU - Kim, Joondong

AU - Sohn, Ahrum

AU - Kim, Dong Wook

N1 - Funding Information: The authors acknowledge the financial support of the Korea Institute of Energy Technology Evaluation and Planning by the Ministry of Knowledge Economy (KETEP-20133030011000), Basic Science Research Program through the National Research Foundation (NRF) of Korea by the Ministry of Education (NRF-2015R1D1A1A01059165), Korea Research Fellowship Program through the NRF by the Ministry of Science, ICT and Future Planning (NRF-2015H1D3A1066311) and post-doctoral research program through the Incheon National University. Publisher Copyright: © 2016 Author(s).

PY - 2016/9/5

Y1 - 2016/9/5

N2 - Zero-bias operating Cu oxide-based photodetector was achieved by using large-scale available sputtering method. Cu oxide (Cu2O or CuO) was used as p-type transparent layer to form a heterojunction by contacting n-type ZnO layer. All metal-oxide materials were employed to realize transparent device at room temperature and showed a high transparency (>75% at 600 nm) with excellent photoresponses. The structural, morphological, optical, and electrical properties of Cu oxides of CuO and Cu2O are evaluated in depth by UV-visible spectrometer, X-ray diffraction, scanning electron microscopy, atomic force microscopy, Kelvin probe force microscopy, and Hall measurements. We may suggest a route of high-functional Cu oxide-based photoelectric devices for the applications in flexible and transparent electronics.

AB - Zero-bias operating Cu oxide-based photodetector was achieved by using large-scale available sputtering method. Cu oxide (Cu2O or CuO) was used as p-type transparent layer to form a heterojunction by contacting n-type ZnO layer. All metal-oxide materials were employed to realize transparent device at room temperature and showed a high transparency (>75% at 600 nm) with excellent photoresponses. The structural, morphological, optical, and electrical properties of Cu oxides of CuO and Cu2O are evaluated in depth by UV-visible spectrometer, X-ray diffraction, scanning electron microscopy, atomic force microscopy, Kelvin probe force microscopy, and Hall measurements. We may suggest a route of high-functional Cu oxide-based photoelectric devices for the applications in flexible and transparent electronics.

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Optical and electrical properties of Cu-based all oxide semi-transparent photodetector

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