TY - JOUR
T1 - Opposing effects of stacking faults and antisite domain boundaries on the conduction band edge in kesterite quaternary semiconductors
AU - Park, Ji Sang
AU - Kim, Sunghyun
AU - Walsh, Aron
N1 - Funding Information:
This project has received funding from the European H2020 Framework Programme for research, technological development and demonstration under Grant Agreement No. 720907. See http://www.starcell.eu . AW is supported by a Royal Society University Research Fellowship. Via our membership of the UK's HPC Materials Chemistry Consortium, which is funded by EPSRC (EP/L000202), this work used the ARCHER UK National Supercomputing Service ( http://www.archer.ac.uk ). We are grateful to the UK Materials and Molecular Modelling Hub for computational resources, which is partially funded by EPSRC (EP/P020194/1).
Publisher Copyright:
© 2018 American Physical Society.
PY - 2018/1/17
Y1 - 2018/1/17
N2 - We investigated stability and the electronic structure of extended defects including antisite domain boundaries and stacking faults in the kesterite-structured semiconductors, Cu2ZnSnS4 (CZTS) and Cu2ZnSnSe4 (CZTSe). Our hybrid density functional theory calculations show that stacking faults in CZTS and CZTSe induce a higher conduction band edge than the bulk counterparts, and thus the stacking faults act as electron barriers. Antisite domain boundaries, however, accumulate electrons as the conduction band edge is reduced in energy, having an opposite role. An Ising model was constructed to account for the stability of stacking faults, which shows the nearest-neighbor interaction is stronger in the case of the selenide.
AB - We investigated stability and the electronic structure of extended defects including antisite domain boundaries and stacking faults in the kesterite-structured semiconductors, Cu2ZnSnS4 (CZTS) and Cu2ZnSnSe4 (CZTSe). Our hybrid density functional theory calculations show that stacking faults in CZTS and CZTSe induce a higher conduction band edge than the bulk counterparts, and thus the stacking faults act as electron barriers. Antisite domain boundaries, however, accumulate electrons as the conduction band edge is reduced in energy, having an opposite role. An Ising model was constructed to account for the stability of stacking faults, which shows the nearest-neighbor interaction is stronger in the case of the selenide.
UR - http://www.scopus.com/inward/record.url?scp=85046901258&partnerID=8YFLogxK
U2 - 10.1103/PhysRevMaterials.2.014602
DO - 10.1103/PhysRevMaterials.2.014602
M3 - Article
AN - SCOPUS:85046901258
SN - 2475-9953
VL - 2
JO - Physical Review Materials
JF - Physical Review Materials
IS - 1
M1 - 014602
ER -