Open-circuit voltage deficit in Cu2ZnSnS4 solar cells by interface bandgap narrowing

Ji Sang Park; Sunghyun Kim; Samantha N. Hood; Aron Walsh

doi:10.1063/1.5063793

Open-circuit voltage deficit in Cu₂ZnSnS₄ solar cells by interface bandgap narrowing

Ji Sang Park, Sunghyun Kim, Samantha N. Hood, Aron Walsh

Department of Physics

Research output: Contribution to journal › Article › peer-review

17 Scopus citations

Abstract

There is evidence that interface recombination in Cu₂ZnSnS₄ solar cells contributes to the open-circuit voltage deficit. Our hybrid density functional theory calculations suggest that electron-hole recombination at the Cu₂ZnSnS₄/CdS interface is caused by a deeper conduction band that slows electron extraction. In contrast, the bandgap is not narrowed for the Cu₂ZnSnS₄/CdS interface, consistent with a lower open-circuit voltage deficit.

Original language	English
Article number	212103
Journal	Applied Physics Letters
Volume	113
Issue number	21
DOIs	https://doi.org/10.1063/1.5063793
State	Published - 19 Nov 2018

Bibliographical note

Publisher Copyright:
© 2018 Author(s).

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10.1063/1.5063793

Cite this

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abstract = "There is evidence that interface recombination in Cu2ZnSnS4 solar cells contributes to the open-circuit voltage deficit. Our hybrid density functional theory calculations suggest that electron-hole recombination at the Cu2ZnSnS4/CdS interface is caused by a deeper conduction band that slows electron extraction. In contrast, the bandgap is not narrowed for the Cu2ZnSnS4/CdS interface, consistent with a lower open-circuit voltage deficit.",

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