One-Step All-Solution-Based Au–GO Core–Shell Nanosphere Active Layers in Nonvolatile ReRAM Devices

Engineering

• One Step 100%
• Nanosphere 100%
• Active Layer 100%
• Resistive 50%
• Random Access Memory Device 50%
• Bistables 50%
• Resistive Random Access Memory 50%
• Flexible Substrate 50%
• Operating Voltage 50%
• Process Approach 50%
• Solution Process 50%
• Graphene Oxide 50%
• Room Temperature 50%
• Space Charge 50%