Numerical simulations of pattern-dependent charging during etching of antenna structures in high-density plasmas reveal a counter-intuitive non-linear dependence on antenna area ratio of the tunneling current that stresses a thin buried gate oxide to which the antenna is electrically connected. The sub-linear relationship is explained by the fact that the net current density collected by the antenna decreases as the antenna area is increased.
|Number of pages||4|
|State||Published - 1999|
|Event||Proceedings of the 1999 4th International Symposium on Plasma Process-Induced Damage (P2ID) - Monterey, CA, USA|
Duration: 9 May 1999 → 11 May 1999
|Conference||Proceedings of the 1999 4th International Symposium on Plasma Process-Induced Damage (P2ID)|
|City||Monterey, CA, USA|
|Period||9/05/99 → 11/05/99|