Abstract
Numerical simulations of pattern-dependent charging during etching of antenna structures in high-density plasmas reveal a counter-intuitive non-linear dependence on antenna area ratio of the tunneling current that stresses a thin buried gate oxide to which the antenna is electrically connected. The sub-linear relationship is explained by the fact that the net current density collected by the antenna decreases as the antenna area is increased.
| Original language | English |
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| Pages | 21-24 |
| Number of pages | 4 |
| State | Published - 1999 |
| Event | Proceedings of the 1999 4th International Symposium on Plasma Process-Induced Damage (P2ID) - Monterey, CA, USA Duration: 9 May 1999 → 11 May 1999 |
Conference
| Conference | Proceedings of the 1999 4th International Symposium on Plasma Process-Induced Damage (P2ID) |
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| City | Monterey, CA, USA |
| Period | 9/05/99 → 11/05/99 |