Occurrence of both unipolar memory and threshold resistance switching in a NiO film

S. H. Chang; J. S. Lee; S. C. Chae; S. B. Lee; C. Liu; B. Kahng; D. W. Kim; T. W. Noh

doi:10.1103/PhysRevLett.102.026801

Occurrence of both unipolar memory and threshold resistance switching in a NiO film

S. H. Chang, J. S. Lee, S. C. Chae, S. B. Lee, C. Liu, B. Kahng, D. W. Kim, T. W. Noh

Department of Physics

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231 Scopus citations

Abstract

We observed two types of reversible resistance switching (RS) effects in a NiO film: memory RS at low temperature and threshold RS at high temperature. We were able to control the type of RS effects by thermal cycling. These phenomena were explained using a new dynamic percolation model that can describe the rupture and formation of conducting filaments. We showed that the RS effects are governed by the thermal stability of the filaments, which arise from competition between Joule heating and thermal dissipation. This work provides us understandings on basic mechanism of the RS effects and their interrelation.

Original language	English
Article number	026801
Journal	Physical Review Letters
Volume	102
Issue number	2
DOIs	https://doi.org/10.1103/PhysRevLett.102.026801
State	Published - 12 Jan 2009

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10.1103/PhysRevLett.102.026801

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title = "Occurrence of both unipolar memory and threshold resistance switching in a NiO film",

abstract = "We observed two types of reversible resistance switching (RS) effects in a NiO film: memory RS at low temperature and threshold RS at high temperature. We were able to control the type of RS effects by thermal cycling. These phenomena were explained using a new dynamic percolation model that can describe the rupture and formation of conducting filaments. We showed that the RS effects are governed by the thermal stability of the filaments, which arise from competition between Joule heating and thermal dissipation. This work provides us understandings on basic mechanism of the RS effects and their interrelation.",

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AU - Chang, S. H.

AU - Lee, J. S.

AU - Chae, S. C.

AU - Lee, S. B.

AU - Liu, C.

AU - Kahng, B.

AU - Kim, D. W.

AU - Noh, T. W.

PY - 2009/1/12

Y1 - 2009/1/12

N2 - We observed two types of reversible resistance switching (RS) effects in a NiO film: memory RS at low temperature and threshold RS at high temperature. We were able to control the type of RS effects by thermal cycling. These phenomena were explained using a new dynamic percolation model that can describe the rupture and formation of conducting filaments. We showed that the RS effects are governed by the thermal stability of the filaments, which arise from competition between Joule heating and thermal dissipation. This work provides us understandings on basic mechanism of the RS effects and their interrelation.

AB - We observed two types of reversible resistance switching (RS) effects in a NiO film: memory RS at low temperature and threshold RS at high temperature. We were able to control the type of RS effects by thermal cycling. These phenomena were explained using a new dynamic percolation model that can describe the rupture and formation of conducting filaments. We showed that the RS effects are governed by the thermal stability of the filaments, which arise from competition between Joule heating and thermal dissipation. This work provides us understandings on basic mechanism of the RS effects and their interrelation.

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JO - Physical Review Letters

JF - Physical Review Letters

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Occurrence of both unipolar memory and threshold resistance switching in a NiO film

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