Nonvolatile switching characteristics of laser-ablated Ge 2Sb2Te5 nanoparticles for phase-change memory applications

Dong Seok Suh, Eunhye Lee, Kijoon H.P. Kim, Jin Seo Noh, Woong Chul Shin, Youn Seon Kang, Cheolkyu Kim, Yoonho Khang, H. R. Yoon, W. Jo

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Abstract

Electrical characteristics of Ge2 Sb2 Te5 (GST) nanoparticles have been examined for a phase-change memory applications. The GST nanoparticles were generated by in situ pulsed laser ablation and their crystal structure formation was confirmed [H. R. Yoon, J. Non-Cryst. Solids 351, 3430 (2005)]. A stacked structure of the GST nanoparticles with 10 nm of average diameter shows reversible nonvolatile switching characteristics between a high resistance state and a low resistance state as in the phase-change memory consisting of bulk GST thin film. Experimental results indicate that it is highly probable to test scaling issues of the phase-change memory with well-defined GST nanoparticles.

Original languageEnglish
Article number023101
JournalApplied Physics Letters
Volume90
Issue number2
DOIs
StatePublished - 2007

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