Nonvolatile switching characteristics of laser-ablated Ge 2Sb2Te5 nanoparticles for phase-change memory applications

Dong Seok Suh; Eunhye Lee; Kijoon H.P. Kim; Jin Seo Noh; Woong Chul Shin; Youn Seon Kang; Cheolkyu Kim; Yoonho Khang; H. R. Yoon; W. Jo

doi:10.1063/1.2430481

Nonvolatile switching characteristics of laser-ablated Ge ₂Sb₂Te₅ nanoparticles for phase-change memory applications

Dong Seok Suh, Eunhye Lee, Kijoon H.P. Kim, Jin Seo Noh, Woong Chul Shin, Youn Seon Kang, Cheolkyu Kim, Yoonho Khang, H. R. Yoon, W. Jo

Department of Physics

Research output: Contribution to journal › Article › peer-review

25 Scopus citations

Abstract

Electrical characteristics of Ge2 Sb2 Te5 (GST) nanoparticles have been examined for a phase-change memory applications. The GST nanoparticles were generated by in situ pulsed laser ablation and their crystal structure formation was confirmed [H. R. Yoon, J. Non-Cryst. Solids 351, 3430 (2005)]. A stacked structure of the GST nanoparticles with 10 nm of average diameter shows reversible nonvolatile switching characteristics between a high resistance state and a low resistance state as in the phase-change memory consisting of bulk GST thin film. Experimental results indicate that it is highly probable to test scaling issues of the phase-change memory with well-defined GST nanoparticles.

Original language	English
Article number	023101
Journal	Applied Physics Letters
Volume	90
Issue number	2
DOIs	https://doi.org/10.1063/1.2430481
State	Published - 2007

Bibliographical note

Funding Information:
Two of the authors (H.Y. and W.J.) appreciate a support by a Grant (No. 06K1501-02520) from the “Center for Nanostructured Materials Technology” under “21st Century Frontier R&D Programs” of the Ministry of Science and Technology.

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10.1063/1.2430481

Cite this

@article{be79016389fe4527b27c2ea9ce410d1e,

title = "Nonvolatile switching characteristics of laser-ablated Ge 2Sb2Te5 nanoparticles for phase-change memory applications",

abstract = "Electrical characteristics of Ge2 Sb2 Te5 (GST) nanoparticles have been examined for a phase-change memory applications. The GST nanoparticles were generated by in situ pulsed laser ablation and their crystal structure formation was confirmed [H. R. Yoon, J. Non-Cryst. Solids 351, 3430 (2005)]. A stacked structure of the GST nanoparticles with 10 nm of average diameter shows reversible nonvolatile switching characteristics between a high resistance state and a low resistance state as in the phase-change memory consisting of bulk GST thin film. Experimental results indicate that it is highly probable to test scaling issues of the phase-change memory with well-defined GST nanoparticles.",

author = "Suh, {Dong Seok} and Eunhye Lee and Kim, {Kijoon H.P.} and Noh, {Jin Seo} and Shin, {Woong Chul} and Kang, {Youn Seon} and Cheolkyu Kim and Yoonho Khang and Yoon, {H. R.} and W. Jo",

note = "Funding Information: Two of the authors (H.Y. and W.J.) appreciate a support by a Grant (No. 06K1501-02520) from the “Center for Nanostructured Materials Technology” under “21st Century Frontier R&D Programs” of the Ministry of Science and Technology.",

year = "2007",

doi = "10.1063/1.2430481",

language = "English",

volume = "90",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

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TY - JOUR

T1 - Nonvolatile switching characteristics of laser-ablated Ge 2Sb2Te5 nanoparticles for phase-change memory applications

AU - Suh, Dong Seok

AU - Lee, Eunhye

AU - Kim, Kijoon H.P.

AU - Noh, Jin Seo

AU - Shin, Woong Chul

AU - Kang, Youn Seon

AU - Kim, Cheolkyu

AU - Khang, Yoonho

AU - Yoon, H. R.

AU - Jo, W.

N1 - Funding Information: Two of the authors (H.Y. and W.J.) appreciate a support by a Grant (No. 06K1501-02520) from the “Center for Nanostructured Materials Technology” under “21st Century Frontier R&D Programs” of the Ministry of Science and Technology.

PY - 2007

Y1 - 2007

N2 - Electrical characteristics of Ge2 Sb2 Te5 (GST) nanoparticles have been examined for a phase-change memory applications. The GST nanoparticles were generated by in situ pulsed laser ablation and their crystal structure formation was confirmed [H. R. Yoon, J. Non-Cryst. Solids 351, 3430 (2005)]. A stacked structure of the GST nanoparticles with 10 nm of average diameter shows reversible nonvolatile switching characteristics between a high resistance state and a low resistance state as in the phase-change memory consisting of bulk GST thin film. Experimental results indicate that it is highly probable to test scaling issues of the phase-change memory with well-defined GST nanoparticles.

AB - Electrical characteristics of Ge2 Sb2 Te5 (GST) nanoparticles have been examined for a phase-change memory applications. The GST nanoparticles were generated by in situ pulsed laser ablation and their crystal structure formation was confirmed [H. R. Yoon, J. Non-Cryst. Solids 351, 3430 (2005)]. A stacked structure of the GST nanoparticles with 10 nm of average diameter shows reversible nonvolatile switching characteristics between a high resistance state and a low resistance state as in the phase-change memory consisting of bulk GST thin film. Experimental results indicate that it is highly probable to test scaling issues of the phase-change memory with well-defined GST nanoparticles.

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