Electrical characteristics of Ge2 Sb2 Te5 (GST) nanoparticles have been examined for a phase-change memory applications. The GST nanoparticles were generated by in situ pulsed laser ablation and their crystal structure formation was confirmed [H. R. Yoon, J. Non-Cryst. Solids 351, 3430 (2005)]. A stacked structure of the GST nanoparticles with 10 nm of average diameter shows reversible nonvolatile switching characteristics between a high resistance state and a low resistance state as in the phase-change memory consisting of bulk GST thin film. Experimental results indicate that it is highly probable to test scaling issues of the phase-change memory with well-defined GST nanoparticles.
Bibliographical noteFunding Information:
Two of the authors (H.Y. and W.J.) appreciate a support by a Grant (No. 06K1501-02520) from the “Center for Nanostructured Materials Technology” under “21st Century Frontier R&D Programs” of the Ministry of Science and Technology.