Non-Volatile ReRAM Devices Based on Self-Assembled Multilayers of Modified Graphene Oxide 2D Nanosheets

Adila Rani, Dhinesh Babu Velusamy, Richard Hahnkee Kim, Kyungwha Chung, Filipe Marques Mota, Cheolmin Park, Dong Ha Kim

Research output: Contribution to journalArticlepeer-review

39 Scopus citations


2D nanomaterials have been actively utilized in non-volatile resistive switching random access memory (ReRAM) devices due to their high flexibility, 3D-stacking capability, simple structure, transparency, easy fabrication, and low cost. Herein, it demonstrates re-writable, bistable, transparent, and flexible solution-processed crossbar ReRAM devices utilizing graphene oxide (GO) based multilayers as active dielectric layers. The devices employ single- or multi-component-based multilayers composed of positively charged GO (N-GO(+) or NS-GO(+)) with/without negatively charged GO(-) using layer-by-layer assembly method, sandwiched between Al bottom and Au top electrodes. The device based on the multi-component active layer Au/[N-GO(+)/GO(-)]n/Al/PES shows higher ON/OFF ratio of ≈105 with switching voltage of −1.9 V and higher retention stability (≈104 s), whereas the device based on single component (Au/[N-GO(+)]n/Al/PES) shows ≈103 ON/OFF ratio at ±3.5 V switching voltage. The superior ReRAM properties of the multi-component-based device are attributed to a higher coating surface roughness. The Au/[N-GO(+)/GO(–)]n/Al/PES device prepared from lower GO concentration (0.01%) exhibits higher ON/OFF ratio (≈109) at switching voltage of ±2.0 V. However, better stability is achieved by increasing the concentration from 0.01% to 0.05% of all GO-based solutions. It is found that the devices containing MnO2 in the dielectric layer do not improve the ReRAM performance.

Original languageEnglish
Pages (from-to)6167-6174
Number of pages8
Issue number44
StatePublished - 23 Nov 2016

Bibliographical note

Publisher Copyright:
© 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim


  • 2D nanosheet multilayers
  • graphene oxide
  • layer-by-layer self-assembly
  • resistive random access memory


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