TY - JOUR
T1 - Non-Volatile ReRAM Devices Based on Self-Assembled Multilayers of Modified Graphene Oxide 2D Nanosheets
AU - Rani, Adila
AU - Velusamy, Dhinesh Babu
AU - Kim, Richard Hahnkee
AU - Chung, Kyungwha
AU - Mota, Filipe Marques
AU - Park, Cheolmin
AU - Kim, Dong Ha
N1 - Publisher Copyright:
© 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
PY - 2016/11/23
Y1 - 2016/11/23
N2 - 2D nanomaterials have been actively utilized in non-volatile resistive switching random access memory (ReRAM) devices due to their high flexibility, 3D-stacking capability, simple structure, transparency, easy fabrication, and low cost. Herein, it demonstrates re-writable, bistable, transparent, and flexible solution-processed crossbar ReRAM devices utilizing graphene oxide (GO) based multilayers as active dielectric layers. The devices employ single- or multi-component-based multilayers composed of positively charged GO (N-GO(+) or NS-GO(+)) with/without negatively charged GO(-) using layer-by-layer assembly method, sandwiched between Al bottom and Au top electrodes. The device based on the multi-component active layer Au/[N-GO(+)/GO(-)]n/Al/PES shows higher ON/OFF ratio of ≈105 with switching voltage of −1.9 V and higher retention stability (≈104 s), whereas the device based on single component (Au/[N-GO(+)]n/Al/PES) shows ≈103 ON/OFF ratio at ±3.5 V switching voltage. The superior ReRAM properties of the multi-component-based device are attributed to a higher coating surface roughness. The Au/[N-GO(+)/GO(–)]n/Al/PES device prepared from lower GO concentration (0.01%) exhibits higher ON/OFF ratio (≈109) at switching voltage of ±2.0 V. However, better stability is achieved by increasing the concentration from 0.01% to 0.05% of all GO-based solutions. It is found that the devices containing MnO2 in the dielectric layer do not improve the ReRAM performance.
AB - 2D nanomaterials have been actively utilized in non-volatile resistive switching random access memory (ReRAM) devices due to their high flexibility, 3D-stacking capability, simple structure, transparency, easy fabrication, and low cost. Herein, it demonstrates re-writable, bistable, transparent, and flexible solution-processed crossbar ReRAM devices utilizing graphene oxide (GO) based multilayers as active dielectric layers. The devices employ single- or multi-component-based multilayers composed of positively charged GO (N-GO(+) or NS-GO(+)) with/without negatively charged GO(-) using layer-by-layer assembly method, sandwiched between Al bottom and Au top electrodes. The device based on the multi-component active layer Au/[N-GO(+)/GO(-)]n/Al/PES shows higher ON/OFF ratio of ≈105 with switching voltage of −1.9 V and higher retention stability (≈104 s), whereas the device based on single component (Au/[N-GO(+)]n/Al/PES) shows ≈103 ON/OFF ratio at ±3.5 V switching voltage. The superior ReRAM properties of the multi-component-based device are attributed to a higher coating surface roughness. The Au/[N-GO(+)/GO(–)]n/Al/PES device prepared from lower GO concentration (0.01%) exhibits higher ON/OFF ratio (≈109) at switching voltage of ±2.0 V. However, better stability is achieved by increasing the concentration from 0.01% to 0.05% of all GO-based solutions. It is found that the devices containing MnO2 in the dielectric layer do not improve the ReRAM performance.
KW - 2D nanosheet multilayers
KW - graphene oxide
KW - layer-by-layer self-assembly
KW - resistive random access memory
UR - http://www.scopus.com/inward/record.url?scp=84990050966&partnerID=8YFLogxK
U2 - 10.1002/smll.201602276
DO - 10.1002/smll.201602276
M3 - Article
AN - SCOPUS:84990050966
SN - 1613-6810
VL - 12
SP - 6167
EP - 6174
JO - Small
JF - Small
IS - 44
ER -