Abstract
We have studied the current-voltage (I-V) characteristics of polydiacetylene (PDA) thin films in the temperature region 300-1.7 K. It was found that at electric fields higher than 2 × 104 V/cm, the I-V characteristics are strongly super-linear with negative temperature coefficient of starting voltage. Negative gate voltage increases the source-drain current (the effect is more pronounced at low temperature), whereas the magnetic field up to 7 T does not affect it. The results demonstrate that at low temperature the charge transport is mainly supported due to a charge injection and tunneling from the metallic banks, whereas at higher temperatures the activation energy is related to the band gap mismatch between the different polymer chains or granules.
Original language | English |
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Pages (from-to) | 85-89 |
Number of pages | 5 |
Journal | Current Applied Physics |
Volume | 5 |
Issue number | 1 |
DOIs | |
State | Published - Jan 2005 |
Keywords
- Field effect transistor (FET)
- Polydiacetylene (PDA) thin film
- Temperature dependent I-V characteristics
- Tunneling conduction at low temperature