Abstract
We have studied the current-voltage (I-V) characteristics of polydiacetylene (PDA) thin films in the temperature region 300-1.7 K. It was found that at electric fields higher than 2 × 104 V/cm, the I-V characteristics are strongly super-linear with negative temperature coefficient of starting voltage. Negative gate voltage increases the source-drain current (the effect is more pronounced at low temperature), whereas the magnetic field up to 7 T does not affect it. The results demonstrate that at low temperature the charge transport is mainly supported due to a charge injection and tunneling from the metallic banks, whereas at higher temperatures the activation energy is related to the band gap mismatch between the different polymer chains or granules.
| Original language | English |
|---|---|
| Pages (from-to) | 85-89 |
| Number of pages | 5 |
| Journal | Current Applied Physics |
| Volume | 5 |
| Issue number | 1 |
| DOIs | |
| State | Published - Jan 2005 |
Bibliographical note
Funding Information:Authors are grateful to L. Zuppiroli for fruitful discussions and A. N. Baranov for support. This work was supported by the National Research Laboratory (NRL) program M1-0104-00-0023 of Ministry of Science and Technology (MOST), Korea. Partial support for A.N.A. is from the BK-21 Program of Ministry of Education, Korea.
Keywords
- Field effect transistor (FET)
- Polydiacetylene (PDA) thin film
- Temperature dependent I-V characteristics
- Tunneling conduction at low temperature