Non-Ohmic conduction in polydiacetylene thin films

A. N. Aleshin; S. W. Chu; V. I. Kozub; S. W. Lee; J. Y. Lee; S. H. Lee; D. W. Kim; Y. W. Park

doi:10.1016/j.cap.2003.11.087

Non-Ohmic conduction in polydiacetylene thin films

A. N. Aleshin, S. W. Chu, V. I. Kozub, S. W. Lee, J. Y. Lee, S. H. Lee, D. W. Kim, Y. W. Park

Research output: Contribution to journal › Article › peer-review

18 Scopus citations

Abstract

We have studied the current-voltage (I-V) characteristics of polydiacetylene (PDA) thin films in the temperature region 300-1.7 K. It was found that at electric fields higher than 2 × 10⁴ V/cm, the I-V characteristics are strongly super-linear with negative temperature coefficient of starting voltage. Negative gate voltage increases the source-drain current (the effect is more pronounced at low temperature), whereas the magnetic field up to 7 T does not affect it. The results demonstrate that at low temperature the charge transport is mainly supported due to a charge injection and tunneling from the metallic banks, whereas at higher temperatures the activation energy is related to the band gap mismatch between the different polymer chains or granules.

Original language	English
Pages (from-to)	85-89
Number of pages	5
Journal	Current Applied Physics
Volume	5
Issue number	1
DOIs	https://doi.org/10.1016/j.cap.2003.11.087
State	Published - Jan 2005

Keywords

Field effect transistor (FET)
Polydiacetylene (PDA) thin film
Temperature dependent I-V characteristics
Tunneling conduction at low temperature

Access to Document

10.1016/j.cap.2003.11.087

Cite this

@article{a582c14ee4f147609e7268975054b1e4,

title = "Non-Ohmic conduction in polydiacetylene thin films",

abstract = "We have studied the current-voltage (I-V) characteristics of polydiacetylene (PDA) thin films in the temperature region 300-1.7 K. It was found that at electric fields higher than 2 × 104 V/cm, the I-V characteristics are strongly super-linear with negative temperature coefficient of starting voltage. Negative gate voltage increases the source-drain current (the effect is more pronounced at low temperature), whereas the magnetic field up to 7 T does not affect it. The results demonstrate that at low temperature the charge transport is mainly supported due to a charge injection and tunneling from the metallic banks, whereas at higher temperatures the activation energy is related to the band gap mismatch between the different polymer chains or granules.",

keywords = "Field effect transistor (FET), Polydiacetylene (PDA) thin film, Temperature dependent I-V characteristics, Tunneling conduction at low temperature",

author = "Aleshin, {A. N.} and Chu, {S. W.} and Kozub, {V. I.} and Lee, {S. W.} and Lee, {J. Y.} and Lee, {S. H.} and Kim, {D. W.} and Park, {Y. W.}",

note = "Funding Information: Authors are grateful to L. Zuppiroli for fruitful discussions and A. N. Baranov for support. This work was supported by the National Research Laboratory (NRL) program M1-0104-00-0023 of Ministry of Science and Technology (MOST), Korea. Partial support for A.N.A. is from the BK-21 Program of Ministry of Education, Korea.",

year = "2005",

month = jan,

doi = "10.1016/j.cap.2003.11.087",

language = "English",

volume = "5",

pages = "85--89",

journal = "Current Applied Physics",

issn = "1567-1739",

publisher = "Elsevier",

number = "1",

}

TY - JOUR

T1 - Non-Ohmic conduction in polydiacetylene thin films

AU - Aleshin, A. N.

AU - Chu, S. W.

AU - Kozub, V. I.

AU - Lee, S. W.

AU - Lee, J. Y.

AU - Lee, S. H.

AU - Kim, D. W.

AU - Park, Y. W.

N1 - Funding Information: Authors are grateful to L. Zuppiroli for fruitful discussions and A. N. Baranov for support. This work was supported by the National Research Laboratory (NRL) program M1-0104-00-0023 of Ministry of Science and Technology (MOST), Korea. Partial support for A.N.A. is from the BK-21 Program of Ministry of Education, Korea.

PY - 2005/1

Y1 - 2005/1

N2 - We have studied the current-voltage (I-V) characteristics of polydiacetylene (PDA) thin films in the temperature region 300-1.7 K. It was found that at electric fields higher than 2 × 104 V/cm, the I-V characteristics are strongly super-linear with negative temperature coefficient of starting voltage. Negative gate voltage increases the source-drain current (the effect is more pronounced at low temperature), whereas the magnetic field up to 7 T does not affect it. The results demonstrate that at low temperature the charge transport is mainly supported due to a charge injection and tunneling from the metallic banks, whereas at higher temperatures the activation energy is related to the band gap mismatch between the different polymer chains or granules.

AB - We have studied the current-voltage (I-V) characteristics of polydiacetylene (PDA) thin films in the temperature region 300-1.7 K. It was found that at electric fields higher than 2 × 104 V/cm, the I-V characteristics are strongly super-linear with negative temperature coefficient of starting voltage. Negative gate voltage increases the source-drain current (the effect is more pronounced at low temperature), whereas the magnetic field up to 7 T does not affect it. The results demonstrate that at low temperature the charge transport is mainly supported due to a charge injection and tunneling from the metallic banks, whereas at higher temperatures the activation energy is related to the band gap mismatch between the different polymer chains or granules.

KW - Field effect transistor (FET)

KW - Polydiacetylene (PDA) thin film

KW - Temperature dependent I-V characteristics

KW - Tunneling conduction at low temperature

UR - http://www.scopus.com/inward/record.url?scp=6444221442&partnerID=8YFLogxK

U2 - 10.1016/j.cap.2003.11.087

DO - 10.1016/j.cap.2003.11.087

M3 - Article

AN - SCOPUS:6444221442

SN - 1567-1739

VL - 5

SP - 85

EP - 89

JO - Current Applied Physics

JF - Current Applied Physics

IS - 1

ER -

Non-Ohmic conduction in polydiacetylene thin films

Abstract

Keywords

Access to Document

Fingerprint

Cite this