Non-Ohmic conduction in polydiacetylene thin films

A. N. Aleshin, S. W. Chu, V. I. Kozub, S. W. Lee, J. Y. Lee, S. H. Lee, D. W. Kim, Y. W. Park

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18 Scopus citations


We have studied the current-voltage (I-V) characteristics of polydiacetylene (PDA) thin films in the temperature region 300-1.7 K. It was found that at electric fields higher than 2 × 104 V/cm, the I-V characteristics are strongly super-linear with negative temperature coefficient of starting voltage. Negative gate voltage increases the source-drain current (the effect is more pronounced at low temperature), whereas the magnetic field up to 7 T does not affect it. The results demonstrate that at low temperature the charge transport is mainly supported due to a charge injection and tunneling from the metallic banks, whereas at higher temperatures the activation energy is related to the band gap mismatch between the different polymer chains or granules.

Original languageEnglish
Pages (from-to)85-89
Number of pages5
JournalCurrent Applied Physics
Issue number1
StatePublished - Jan 2005

Bibliographical note

Funding Information:
Authors are grateful to L. Zuppiroli for fruitful discussions and A. N. Baranov for support. This work was supported by the National Research Laboratory (NRL) program M1-0104-00-0023 of Ministry of Science and Technology (MOST), Korea. Partial support for A.N.A. is from the BK-21 Program of Ministry of Education, Korea.


  • Field effect transistor (FET)
  • Polydiacetylene (PDA) thin film
  • Temperature dependent I-V characteristics
  • Tunneling conduction at low temperature


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