Abstract
We explore hybrid gallium nitride-organic semiconductors as composite layered thin film materials and report on initial results of fundamental studies of carrier transport across a junction composed of InGaN and selected organic thin films, with the eventual application goal towards versatile optoelectronic devices.
Original language | English |
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Pages (from-to) | 2411-2414 |
Number of pages | 4 |
Journal | Physica Status Solidi (C) Current Topics in Solid State Physics |
Volume | 4 |
Issue number | 7 |
DOIs | |
State | Published - 2007 |
Event | International Workshop on Nitride Semiconductors, IWN 2006 - Kyoto, Japan Duration: 22 Oct 2006 → 27 Oct 2006 |