We explore hybrid gallium nitride-organic semiconductors as composite layered thin film materials and report on initial results of fundamental studies of carrier transport across a junction composed of InGaN and selected organic thin films, with the eventual application goal towards versatile optoelectronic devices.
|Number of pages||4|
|Journal||Physica Status Solidi (C) Current Topics in Solid State Physics|
|State||Published - 2007|
|Event||International Workshop on Nitride Semiconductors, IWN 2006 - Kyoto, Japan|
Duration: 22 Oct 2006 → 27 Oct 2006